KMM366S1623DTL SAMSUNG [Samsung semiconductor], KMM366S1623DTL Datasheet - Page 6

• Manufacturer Part Number: KMM366S1623DTL
• Description: PC66 Unbuffered DIMM
• Manufacturer: SAMSUNG [Samsung semiconductor]

KMM366S1623DTL
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, T
Notes :
Operating current
(One bank active)
Precharge standby current in
power-down mode
Precharge standby current in
non power-down mode
Active standby current in
power-down mode
Active standby current in
non power-down mode
(One bank active)
Operating current
(Burst mode)
Refresh current
Self refresh current
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Unless otherwise noted, input swing level is CMOS(V
Parameter
Symbol
I
I
I
I
CC2
I
CC2
CC3
I
CC3
I
I
CC2
CC2
CC3
CC3
I
I
I
I
CC1
CC4
CC5
CC6
NS
NS
PS
PS
P
N
P
N
Burst length = 1
t
I
CKE
CKE & CLK
CKE
Input signals are changed one time during 20ns
CKE
Input signals are stable
CKE
CKE & CLK
CKE
Input signals are changed one time during 20ns
CKE
Input signals are stable
I
Page burst
4Banks activated
t
t
CKE
RC
O
O
CCD
RC
= 0 mA
= 0 mA
= 2CLKs
t
t
RC
RC
V
V
V
V
V
V
0.2V
(min)
IL
IH
IH
IL
IH
IH
(min)
(max), t
(max), t
(min), CS
(min), CLK
(min), CS
(min), CLK
V
V
IL
IL
Test Condition
(max), t
(max), t
CC
CC
A
= 0 to 70 C)
IH
= 10ns
= 10ns
V
V
/V
V
V
IH
IH
IL
CC
CC
IL
IL
(min), t
(min), t
=V
(max), t
(max), t
=
=
DDQ
CC
CC
/V
CC
CC
SSQ
= 10ns
= 10ns
=
=
)
PC66 Unbuffered DIMM
Version
1,200
760
240
400
240
960
16
16
96
48
48
16
-0
REV. 0.0 July 1999
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
Note
1
1
2