K4M56163PG-BF90 SAMSUNG [Samsung semiconductor], K4M56163PG-BF90 Datasheet - Page 6

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K4M56163PG-BF90

Manufacturer Part Number
K4M56163PG-BF90
Description
4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
K4M56163PG - R(B)E/G/C/F
AC OPERATING TEST CONDITIONS
Output
AC input levels (Vih/Vil)
Input timing measurement reference level
Input rise and fall time
Output timing measurement reference level
Output load condition
Figure 1. DC Output Load Circuit
10.6KΩ
Parameter
1.8V
13.9KΩ
20pF
VOH (DC) = VDDQ - 0.2V, IOH = -0.1mA
VOL (DC) = 0.2V, IOL = 0.1mA
(V
DD
= 1.7V ∼ 1.95V, T
0.9 x V
Output
See Figure 2
0.5 x V
0.5 x V
tr/tf = 1/1
Value
A
DDQ
Figure 2. AC Output Load Circuit
= -25 ~ 85°C for Extended, -25 ~ 70°C for Commercial)
DDQ
DDQ
/ 0.2
Z0=50Ω
Mobile SDRAM
Vtt=0.5 x VDDQ
50Ω
20pF
Unit
February 2006
ns
V
V
V

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