NP70N04MUG NEC [NEC], NP70N04MUG Datasheet - Page 5

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NP70N04MUG

Manufacturer Part Number
NP70N04MUG
Description
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
Manufacturer
NEC [NEC]
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NP70N04MUG
Manufacturer:
NEC/RENESAS
Quantity:
12 500
1000
1000
100
100
0.1
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
10
10
8
6
4
2
0
1
1
-75
0.1
0
t
V
I
t
d(on)
r
D
GS
SWITCHING CHARACTERISTICS
= 35 A
V
V
= 10 V
-25
F(S-D)
T
GS
ch
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
= 10 V
- Channel Temperature - °C
- Source to Drain Voltage - V
I
D
t
0.5
t
25
d(off)
f
1
- Drain Current - A
75
0 V
125
10
1
V
V
R
DD
GS
G
175
Pulsed
= 0 Ω
Pulsed
= 20 V
= 10 V
Data Sheet D18664EJ3V0DS
225
100
1.5
10000
1000
1000
100
100
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
40
35
30
25
20
15
10
1
5
0
0.01
0.1
0
V
f = 1 MHz
GS
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
V
= 0 V
DS
20
I
F
0.1
- Drain to Source Voltage - V
- Diode Forward Current - A
V
Q
DD
G
1
- Gate Charge - nC
= 32 V
40
20 V
8 V
V
DS
1
60
NP70N04MUG
C
C
C
V
di/dt = 100 A/μs
V
iss
oss
rss
10
GS
GS
= 0 V
10
I
80
D
= 70 A
100
100
100
12
9
6
3
0
5

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