K4R881869I-DC SAMSUNG [Samsung semiconductor], K4R881869I-DC Datasheet - Page 3

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K4R881869I-DC

Manufacturer Part Number
K4R881869I-DC
Description
Direct RDRAM Product Guide
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
K4R881869I-DCM8
Manufacturer:
SAMSUNG
Quantity:
11 085
Part Number:
K4R881869I-DCT9
Manufacturer:
SAMSUNG
Quantity:
11 090
General Information
A. Direct RDRAM Component Product Guide
*1
*2
Code
- 32s :32 banks with a “spilt” architecture
288Mb(I-die)
Bank description
Package Type
G
H
R
D
F
T
Density
54ball WBGA, Lead free
54ball WBGA
FBGA, Lead free
WBGA, Lead free for SO-RIMM module
WBGA
WBGA, Lead free
512Kx18*32s
Org.
Description
*1
K4R881869I-DC
Part Number
*3
frequency
1200Mbps Long channel
1066Mbps
800Mbps
Speed (Freq. & tRAC)
Data
Speed
T9
*3
Long channel
Short channel
Long channel
Short channel
Application
2.5
Power(V)
±
0.13V 16K/32ms
Refresh
Code
N1
N9
M9
M8
T9
S9
K8
S8
600MHz(1.667ns), -32, 32clks
533MHz (1.875ns), -32P, 28clks
533MHz (1.875ns), -32, 28clks
533MHz (1.875ns), -35, 32clks
533MHz (1.875ns), -35, 32clks
400MHz (2.5ns), -40, 28clks
400MHz (2.5ns), -45, 28clks
400MHz (2.5ns), -45, 28clks
92ball FBGA
Direct RDRAM
Package
Type
(t
CYCLE
*2
Description
. t
RAC
Availability
, t
RC
Now
)

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