M366S1723DTS-C SAMSUNG [Samsung semiconductor], M366S1723DTS-C Datasheet - Page 7
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M366S1723DTS-C
Manufacturer Part Number
M366S1723DTS-C
Description
PC133/PC100 Unbuffered DIMM
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
1.M366S1723DTS-C.pdf
(11 pages)
REFER TO THE INDIVIDUAL COMPONENET, NOT THE WHOLE MODULE.
AC CHARACTERISTICS
Notes :
CLK cycle
time
CLK to valid
output delay
Output data
hold time
CLK high pulse width
CLK low pulse width
Input setup time
Input hold time
CLK to output in Low-Z
CLK to output
in Hi-Z
M366S1723DTS
1. Parameters depend on programmed CAS latency.
2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.
3. Assumed input rise and fall time (tr & tf) = 1ns.
If tr & tf is longer than 1ns, transient time compensation should be considered,
i.e., [(tr + tf)/2-1]ns should be added to the parameter.
Parameter
CAS latency=3
CAS latency=2
CAS latency=3
CAS latency=2
CAS latency=3
CAS latency=2
CAS latency=3
CAS latency=2
(AC operating conditions unless otherwise noted)
Symbol
t
t
t
t
t
t
SAC
t
t
t
SHZ
SLZ
OH
CC
CH
CL
SS
SH
Min
7.5
7.5
2.5
2.5
1.5
0.8
3
3
1
- 7C
1000
Max
5.4
5.4
5.4
5.4
Min
7.5
2.5
2.5
1.5
0.8
10
3
3
1
- 7A
1000
PC133/PC100 Unbuffered DIMM
Max
5.4
5.4
6
6
Min
10
10
3
3
3
3
2
1
1
- 1H
1000
Max
6
6
6
6
Rev. 0.1 Sept. 2001
Min
10
12
3
3
3
3
2
1
1
- 1L
1000
Max
6
7
6
7
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
Note
1,2
1
2
3
3
3
3
2