BS870_ DIODES [Diodes Incorporated], BS870_ Datasheet

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BS870_

Manufacturer Part Number
BS870_
Description
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Manufacturer
DIODES [Diodes Incorporated]
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BS870_BS870-7
Manufacturer:
Diodes
Quantity:
45 000
Part Number:
BS870_BS870-7
Manufacturer:
DIODES/美台
Quantity:
20 000
Part Number:
BS870_BS870-7-F
Manufacturer:
Diodes
Quantity:
24 600
Part Number:
BS870_BS870-7-F
Manufacturer:
DIODES
Quantity:
120
Part Number:
BS870_BS870-7-F
Manufacturer:
DIODES/美台
Quantity:
20 000
Features
DS11302 Rev. 11 - 2
Mechanical Data
Maximum Ratings
Note:
Drain-Source Voltage
Drain-Gate Voltage R
Gate-Source Voltage
Drain Current (Note 1)
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead Free/RoHS Compliant (Note 2)
Case: SOT-23
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
Marking (See Page 2): K70
Ordering & Date Code Information: See Page 2
Weight: 0.008 grams (approximate)
1. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001,
2. No purposefully added lead.
which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
Characteristic
GS
1.0M
@ T
A
= 25 C unless otherwise specified
Continuous
Continuous
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT
www.diodes.com
E
1 of 4
G
Gate
Symbol
T
TOP VIEW
V
V
V
j
R
, T
P
DGR
GSS
DSS
I
G
H
D
D
d
JA
STG
D
A
S
Drain
J
Source
B
K
C
L
-55 to +150
BS870
250
300
417
60
60
20
M
SPICE MODEL: BS870
All Dimensions in mm
Dim
A
B
C
D
G
H
K
M
E
L
J
TRANSISTOR
BS870
SOT-23
Diodes Incorporated
0.013
0.903
0.085
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.45
Units
Min
mW
K/W
0
mA
V
V
V
C
BS870
0.180
Max
0.51
1.40
2.50
1.03
0.60
2.05
3.00
0.10
1.10
0.61
8

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BS870_ Summary of contents

Page 1

... Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Note: 1. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf purposefully added lead. DS11302 Rev N-CHANNEL ENHANCEMENT MODE FIELD EFFECT ...

Page 2

... SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-Off Delay Time Ordering Information (Note 4) Device BS870-7-F Notes: 3. Short duration test pulse used to minimize self-heating effect. 4. For Packaging Details our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information Date Code Key Year 1998 1999 J K Code Month ...

Page 3

V = 10V GS 10V 9.0V 8.0V 7.0V 6.5V 6.0V 0.8 5.5V 5.0V 4.5V 4.0V 3.5V 3.0V 0.6 2.5V 2.1V 0.4 0 DRAIN-SOURCE VOLTAGE (V) DS Fig. 1 On-Region Characteristics 2.0 1.5 ...

Page 4

Diodes, Inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhance- ments, improvements, or other changes. Diodes, Inc. does not assume any liability arising out of the application ...

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