HFD2N70S SEMIHOW [SemiHow Co.,Ltd.], HFD2N70S Datasheet - Page 4

• Manufacturer Part Number: HFD2N70S
• Description: 700V N-Channel MOSFET
• Manufacturer: SEMIHOW [SemiHow Co.,Ltd.]

Typical Characteristics
10
1.2
1.1
1.0
0.9
0.8
10
10
-100
-1
1
0
10
0
Figure 7. Breakdown Voltage Variation
Figure 9. Maximum Safe Operating Area
-50
T
V
J
DS
, Junction Temperature [
vs Temperature
10
Operation in This Area
is Limited by R
, Drain-Source Voltage [V]
0
* Notes :
10
10
1
10
1. T
2. T
3. Single Pulse
-1
-2
0
10
C
J
= 150
= 25
-5
0.01
0.02
0.05
D=0.5
o
C
o
0.1
DS(on)
0.2
50
C
DC
Figure 11. Transient Thermal Response Curve
(continued)
100 ms
single pulse
10
100
10
10 ms
2
-4
o
C]
* Note :
t
1 ms
1. V
1
2. I
, Square Wave Pulse Duration [sec]
D
GS
= 250 µA
150
100 µs
= 0 V
10
10 µs
-3
200
10
3
10
-2
3.0
2.5
2.0
1.5
1.0
0.5
0.0
2.0
1.5
1.0
0.5
0.0
-100
25
* Notes :
Figure 8. On-Resistance Variation
Figure 10. Maximum Drain Current
P
1. Z
2. Duty Factor, D=t
3. T
10
DM
-1
θJC
JM
(t) = 3.3
- T
-50
C
50
= P
DM
t
o
T
C/W Max.
1
J
T
* Z
, Junction Temperature [
t
10
C
2
vs Temperature
vs Case Temperature
0
, Case Temperature [
1
/t
θJC
0
2
(t)
75
50
10
100
1
100
o
C]
o
C]
◎ SEMIHOW REV.A0,Dec 2009
125
∗ Note :
1. V
2. I
150
D
GS
= 0.75 A
= 10 V
150
200