HYS64V2200GU-10 SIEMENS [Siemens Semiconductor Group], HYS64V2200GU-10 Datasheet - Page 14
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HYS64V2200GU-10
Manufacturer Part Number
HYS64V2200GU-10
Description
3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module
Manufacturer
SIEMENS [Siemens Semiconductor Group]
Datasheet
1.HYS64V2200GU-10.pdf
(17 pages)
SPD-Table (cont’ d ):
Semiconductor Group
Byte#
36-61 Superset information (may be used in
128+ Unused storage locations
125
126
127
64-
29
30
31
32
33
34
35
62
63
Minimum RAS to CAS delay tRCD
Minimum RAS pulse width tRAS
Module Bank Density (per bank)
SDRAM input setup time
SDRAM input hold time
SDRAM data input setup time
SDRAM data input hold time
future)
SPD Revision
Checksum for bytes 0 - 62
Manufacturers information (optional)
(FFh if not used)
Frequency Specification
Details of 100 MHz Support
Description
14
SPD Entry Value
Revision 1.2
16 MByte
100 MHz
20 ns
45 ns
2 ns
1 ns
2 ns
1 ns
HYS64(72)V2200/4220GU-8/-10
2Mx64
-8-3
XX
AD
2D
FF
E7
FF
14
04
20
20
10
10
12
64
2Mx72
SDRAM-Modules
-8-3
XX
AD
2D
FF
F9
FF
14
04
20
10
20
10
12
64
Hex
4Mx64
-8-3
XX
FD
2D
FF
E8
FF
14
04
20
10
20
10
12
64
4Mx72
-8-3
2D
FA
XX
FD
FF
FF
14
04
20
10
20
10
12
64