HS9-4424BRH-8 INTERSIL [Intersil Corporation], HS9-4424BRH-8 Datasheet
HS9-4424BRH-8
Manufacturer Part Number
HS9-4424BRH-8
Description
Radiation Hardened Dual, Non-Inverting Power MOSFET Drivers
Manufacturer
INTERSIL [Intersil Corporation]
Datasheet
1.HS9-4424BRH-8.pdf
(2 pages)
Radiation Hardened Dual, Non-Inverting
Power MOSFET Drivers
The Radiation Hardened HS-4424RH and HS-4424BRH are
non-inverting, dual, monolithic high-speed MOSFET drivers
designed to convert TTL level signals into high current
outputs at voltages up to 18V.
The inputs of these devices are TTL compatible and can be
directly driven by our HS-1825ARH PWM device or by our
ACS/ACTS and HCS/HCTS type logic devices. The fast rise
times and high current outputs allow very quick control of
high gate capacitance power MOSFETs, like our Rad Hard
FS055, in high frequency applications.
The high current outputs minimize power losses in
MOSFETs by rapidly charging and discharging the gate
capacitance. The output stage incorporates a low voltage
lock-out circuit that puts the outputs into a three-state mode
when the supply voltage drops below 10V for the
HS-4424RH and 7.5V for the HS-4424BRH.
Constructed with the Intersil dielectrically isolated Rad Hard
Silicon Gate (RSG) BiCMOS process, these devices are
immune to Single Event Latch-up and have been specifically
designed to provide highly reliable performance in harsh
radiation environments.
Specifications for Rad Hard QML devices are controlled
by the Defense Supply Center in Columbus (DSCC). The
SMD numbers listed here must be used when ordering.
Detailed Electrical Specifications for these devices are
contained in SMD 5962-99560. A “hot-link” is provided
on our homepage for downloading.
www.intersil.com/spacedefense/space.asp
Pinout
NOTE: Pins 4 and 5, 10 and 11, 12 and 13, 14 and 15 are double-
bonded to their same electrical points on the die.
GND A
GND B
IN A
IN B
NC
NC
NC
NC
HS-4424RH, HS-4424BRH (FLATPACK CDFP4-F16)
1
2
3
4
5
6
7
8
TOP VIEW
1
16
15
14
13
12
11
10
9
Data Sheet
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
NC
OUT A
OUT A
V
V
OUT B
OUT B
NC
CC
CC
Features
• Electrically Screened to DESC SMD # 5962-99560
• QML Qualified per MIL-PRF-38535 Requirements
• Radiation Environment
• I
• Matched Rise and Fall Times (C
• Low Voltage Lock-Out Feature
• Wide Supply Voltage Range. . . . . . . . . . . . . . . 12V to 18V
• Prop Delay . . . . . . . . . . . . . . . . . . . . . . . . . . . 250ns (Max)
• Consistent Delay Times with V
• Low Power Consumption
• Low Equivalent Input Capacitance . . . . . . . . . .3.2pF (Typ)
• ESD Protected . . . . . . . . . . . . . . . . . . . . . . . . . . . >4000V
Applications
• Switching Power Supplies
• DC/DC Converters
• Motor Controllers
Ordering Information
5962F9956001VXC
5962F9956001QXC
HS9-4424RH/Proto
5962F9956002VXC
5962F9956002QXC
HS9-4424BRH/Proto
ORDERING NUMBER
1-888-INTERSIL or 321-724-7143
- Total Dose (Max). . . . . . . . . . . . . . . . . . 3 x 10
- Latch-Up Immune
- Low Dose Rate Immune
- HS-4424RH . . . . . . . . . . . . . . . . . . . . . . . . . . . < 10.0V
- HS-4424BRH . . . . . . . . . . . . . . . . . . . . . . . . . . . < 7.5V
- 40mW with Inputs High
- 20mW with Inputs Low
PEAK
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . >2A (Min)
HS-4424RH, HS-4424BRH
June 1999
HS9-4424RH-Q
HS9-4424RH-8
HS9-4424RH/Proto
HS9-4424BRH-Q
HS9-4424BRH-8
HS9-4424BRH/Proto
MKT. NUMBER
INTERNAL
|
Copyright
File Number
CC
L
= 4300pF). . . 75ns (Max)
Changes
©
Intersil Corporation 1999
TEMP. RANGE
-55 to 125
-55 to 125
-55 to 125
-55 to 125
-55 to 125
-55 to 125
5
(
4739.1
o
RAD(SI)
C)
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HS9-4424BRH-8 Summary of contents
Page 1
... CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 File Number 4739.1 5 RAD(SI) = 4300pF 75ns (Max) L Changes CC INTERNAL TEMP. RANGE o MKT. NUMBER ( C) HS9-4424RH-Q -55 to 125 HS9-4424RH-8 -55 to 125 HS9-4424RH/Proto -55 to 125 HS9-4424BRH-Q -55 to 125 HS9-4424BRH-8 -55 to 125 HS9-4424BRH/Proto -55 to 125 © | Copyright Intersil Corporation 1999 ...
Page 2
Die Characteristics DIE DIMENSIONS: 4890 m x 3370 m (193 mils x 133 mils) Thickness: 483 m 25.4 m (19 mils INTERFACE MATERIALS: Glassivation: Type: PSG (Phosphorous Silicon Glass) Thickness: 8.0kÅ 1.0kÅ Top Metallization: Type: AlSiCu Thickness: 16.0kÅ 2kÅ Substrate: ...