HS9-2100RH-8 INTERSIL [Intersil Corporation], HS9-2100RH-8 Datasheet
![no-image](/images/no-image-200.jpg)
HS9-2100RH-8
Manufacturer Part Number
HS9-2100RH-8
Description
Radiation Hardened High Frequency Half Bridge Driver
Manufacturer
INTERSIL [Intersil Corporation]
Datasheet
1.HS9-2100RH-8.pdf
(2 pages)
Radiation Hardened High Frequency
Half Bridge Driver
The Radiation Hardened HS-2100RH is a high frequency,
100V Half Bridge N-Channel MOSFET Driver IC, which is a
functional, pin-to-pin replacement for the Intersil HIP2500
and the industry standard 2110 types. The low-side and
high-side gate drivers are independently controlled. This
gives the user maximum flexibility in dead-time selection and
driver protocol.
In addition, the device has on-chip error detection and
correction circuitry, which monitors the state of the high-side
latch and compares it to the HIN signal. If they disagree, a
set or reset pulse is generated to correct the high-side latch.
This feature protects the high-side latch from SEUs.
Undervoltage on the high-side supply forces HO low. When
that supply returns to a valid voltage, HO will go to the state
of HIN. Undervoltage on the low-side supply forces both LO
and HO low. When that supply becomes valid, LO returns to
the LIN state and HO returns to the HIN state.
Specifications for Rad Hard QML devices are controlled
by the Defense Supply Center in Columbus (DSCC). The
SMD numbers listed here must be used when ordering.
Detailed Electrical Specifications for the HS-2100RH are
contained in SMD 5962-99536. A “hot-link” is provided
on our homepage for downloading.
www.intersil.com/spacedefense/space.asp
This link will not be available until the SMD is finalized.
Ordering Information
5962F9953601VXC
5962F9953601QXC
HS9-2100RH/Proto
ORDERING NUMBER
HS9-2100RH-Q
HS9-2100RH-8
HS9-2100RH/Proto
1
INTERSIL MKT.
NUMBER
Data Sheet
RANGE (
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
-55 to 125
-55 to 125
-55 to 125
TEMP.
o
C)
Features
• Electrically Screened to DESC SMD # 5962-99536
• QML Qualified per MIL-PRF-38535 Requirements
• Radiation Environment
• Bootstrap Supply Max Voltage to 120V
• Drives 1000pF Load at 1MHz with Rise and Fall Times of
• 1A (Typ) Peak Output Current
• Independent Inputs for Non-Half Bridge Topologies
• Low DC Power Consumption . . . . . . . . . . . . . 60mW (Typ)
• Operates with V
• Supply Undervoltage Protection
Applications
• High Frequency Switch-Mode Power Supplies
• Drivers for Inductive Loads
• DC Motor Drivers
Pinout
1-888-INTERSIL or 321-724-7143
- Maximum Total Dose . . . . . . . . . . . . . . 3 x 10
- DI RSG Process Provides Latch-up Immunity
- Vertical Architecture Provides Low Dose Rate Immunity
45ns (Typ)
COM
V
NC
NC
HO
LO
VB
CC
VS
June 1999
DD
FLATPACK (CDFP4-F16)
= V
1
2
3
4
5
6
7
8
HS-2100RH
CC
TOP VIEW
Over 12V to 20V Range
|
Copyright
File Number
16
15
14
13
12
11
10
9
HS-2100RH
©
Intersil Corporation 1999
5
4562.3
RAD(SI)
NC
V
LIN
SD
HIN
V
NC
NC
SS
DD
Related parts for HS9-2100RH-8
HS9-2100RH-8 Summary of contents
Page 1
... This link will not be available until the SMD is finalized. Ordering Information INTERSIL MKT. ORDERING NUMBER NUMBER 5962F9953601VXC HS9-2100RH-Q 5962F9953601QXC HS9-2100RH-8 HS9-2100RH/Proto HS9-2100RH/Proto 1 June 1999 Features • Electrically Screened to DESC SMD # 5962-99536 • QML Qualified per MIL-PRF-38535 Requirements • Radiation Environment - Maximum Total Dose ...
Page 2
Die Characteristics DIE DIMENSIONS: 4710 m x 3570 m (186 mils x 141 mils) Thickness: 483 m 25.4 m (19 mils 1 mil) INTERFACE MATERIALS: Glassivation: Type: PSG (Phosphorous Silicon Glass) Å Å Thickness: 8.0k 1.0k Top Metallization: Type: ALSiCu ...