M391T2953CZ0-CCC SAMSUNG [Samsung semiconductor], M391T2953CZ0-CCC Datasheet - Page 16
![no-image](/images/no-image-200.jpg)
M391T2953CZ0-CCC
Manufacturer Part Number
M391T2953CZ0-CCC
Description
DDR2 Unbuffered SDRAM MODULE 240pin Unbuffered Module based on 512Mb C-die 64/72-bit Non-ECC/ECC
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
1.M391T2953CZ0-CCC.pdf
(22 pages)
Operating Current Table(1-3)
Input/Output Capacitance
Note: DM is internally loaded to match DQ and DQS identically.
256MB, 512MB, 1GB Unbuffered DIMMs
M391T2953CZ3 / M391T2953CZ0 : 1GB(64Mx8 *18) ECC Module
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
Input capacitance, CK and CK
Input capacitance, CKE and CS
Input capacitance, Addr, RAS, CAS, WE
Input/output capacitance, DQ, DM, DQS, DQS
Input capacitance, CK and CK
Input capacitance, CKE and CS
Input capacitance, Addr, RAS, CAS, WE
Input/output capacitance, DQ, DM, DQS, DQS
IDD3P-F
IDD3P-S
Symbol
IDD4W
IDD2Q
IDD2N
IDD3N
IDD4R
IDD2P
IDD5B
IDD0
IDD1
IDD6
IDD7
Parameter
Non-ECC
ECC
E7(800@CL=5)
(V
DD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
=1.8V, V
(T
A
=0
CCK0
CCK1
CCK2
CI1
CI2
CIO(400/533)
CIO(667/800)
CCK0
CCK1
CCK2
CI
CI
CIO(400/533)
CIO(667/800)
1
2
o
C, VDD= 1.9V)
Symbol
Symbol
DDQ
=1.8V, T
E6(667@CL=5)
1,125
1,260
1,620
1,665
1,710
2,340
144
630
720
540
216
855
144
A
=25
Min
M378T6553CZ3
M378T6553CZ0
M391T6553CZ3
M391T6553CZ0
-
-
-
-
-
-
-
-
-
-
-
-
-
o
C)
Max
5.5
5.5
24
25
25
42
42
25
25
25
44
44
D5(533@CL=4)
6
6
1,035
1,170
1,395
1,440
1,575
2,295
144
540
630
540
216
765
144
Min
M378T2953CZ3
M378T2953CZ0
M391T2953CZ3
M391T2953CZ0
-
-
-
-
-
-
-
-
-
-
-
-
CC(400@CL=3)
Max
26
28
28
42
42
10
28
28
28
44
44
10
9
9
1,035
1,170
1,305
1,305
1,575
2,295
144
540
630
540
216
765
144
Rev. 1.2 Aug. 2005
DDR2 SDRAM
M378T3354CZ3
M378T3354CZ0
Min
-
-
-
-
-
-
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Max
5.5
22
24
24
34
34
6
Notes
Units
Units
pF
pF