M470T2953CZ0 SAMSUNG [Samsung semiconductor], M470T2953CZ0 Datasheet - Page 11

• Manufacturer Part Number: M470T2953CZ0
• Description: DDR2 Unbuffered SODIMM
• Manufacturer: SAMSUNG [Samsung semiconductor]

256MB, 512MB, 1GB Unbuffered SODIMMs
M470T3354CZ0: 32Mx64 256MB Module
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
Operating Current Table(1-1)
M470T6554CZ0 : 64Mx64 512MB Module
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
Symbol
IDD3P-S
Symbol
IDD3P-F
IDD3P-F
IDD3P-S
IDD4W
IDD4W
IDD2P
IDD2Q
IDD2N
IDD3N
IDD4R
IDD2P
IDD2Q
IDD2N
IDD3N
IDD4R
IDD0
IDD1
IDD5
IDD6
IDD7
IDD0
IDD1
IDD5
IDD6
IDD7
CD6
CD6
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
667@CL=4
667@CL=4
LD6
LD6
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
CE6
CE6
140
220
780
800
280
380
940
960
40
32
80
64
667@CL=5
667@CL=5
(T
1,400
1,560
480
560
140
160
680
A
640
720
280
320
840
48
96
=0
o
C, VDD= 1.9V)
LE6
LE6
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
CD5
CD5
120
200
680
680
240
340
820
820
40
32
80
64
533@CL=4
533@CL=4
1,280
1,420
140
440
520
140
660
580
660
280
280
800
48
96
LD5
LD5
100
180
600
580
200
320
740
720
24
16
48
32
CCC
CCC
120
200
580
560
240
340
720
700
40
32
80
64
400@CL=3
400@CL=3
1,260
1,400
420
500
120
140
640
560
640
240
280
780
48
96
LCC
LCC
100
180
500
480
200
320
640
620
24
16
48
32
Rev. 1.1 Mar. 2005
Unit
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
DDR2 SDRAM
Notes
Notes