M470L3324CU0-CA2 SAMSUNG [Samsung semiconductor], M470L3324CU0-CA2 Datasheet - Page 9

• Manufacturer Part Number: M470L3324CU0-CA2
• Description: DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb C-die
• Manufacturer: SAMSUNG [Samsung semiconductor]

9.0 DDR SDRAM IDD spec table
9.1 M470L3324CU0 [ (32M x 64) 256MB Module ]
9.2 M470L6524CU0 [ (64M x 64) 512MB Module ]
256MB, 512MB Unbuffered SODIMM
IDD6
IDD6
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
Symbol
Symbol
IDD4W
IDD4W
IDD2Q
IDD3N
IDD4R
IDD2Q
IDD3N
IDD4R
IDD2P
IDD2F
IDD3P
IDD7A
IDD2P
IDD2F
IDD3P
IDD7A
IDD0
IDD1
IDD5
IDD0
IDD1
IDD5
Low power
Low power
Normal
Normal
CC(DDR400@CL=3) B3(DDR333@CL=2.5) A2(DDR266@CL=2) B0(DDR266@CL=2.5)
CC(DDR400@CL=3) B3(DDR333@CL=2.5) A2(DDR266@CL=2) B0(DDR266@CL=2.5)
1,600
1,000
1,100
1,120
1,840
480
640
100
880
720
880
200
120
180
240
760
860
240
360
480
20
20
12
40
40
24
1,520
1,000
1,700
420
560
120
100
120
180
680
740
820
600
740
240
200
240
360
860
920
20
20
12
40
40
24
1,380
1,560
380
520
120
100
120
180
620
640
780
560
700
240
200
240
360
800
820
960
20
20
12
40
40
24
1,380
1,560
380
520
120
100
120
180
620
640
780
560
700
240
200
240
360
800
820
960
20
20
12
40
40
24
Rev. 1.2 June 2005
DDR SDRAM
(V
(V
DD
DD
=2.7V, T = 10°C)
Unit
=2.7V, T = 10°C)
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Optional
Optional
Notes
Notes