M470L2923BN0-CB0 SAMSUNG [Samsung semiconductor], M470L2923BN0-CB0 Datasheet - Page 11

• Manufacturer Part Number: M470L2923BN0-CB0
• Description: DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die
• Manufacturer: SAMSUNG [Samsung semiconductor]

9.3 M470L2923BV0 [ (128M x 64) 1GB Module ]
256MB, 512MB, 1GB Unbuffered SODIMM
IDD6
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
Symbol
IDD4W
IDD2Q
IDD3N
IDD4R
IDD2P
IDD2F
IDD3P
IDD7A
IDD0
IDD1
IDD5
Low power
Normal
CC(DDR400@CL=3) B3(DDR333@CL=2.5) A2(DDR266@CL=2) B0(DDR266@CL=2.5)
2,080
2,240
1,520
2,360
2,680
2,880
4,200
400
480
560
80
80
48
1,400
1,600
1,840
1,880
2,400
3,520
480
400
480
800
80
80
48
1,280
1,480
1,600
1,640
2,320
3,120
480
400
480
800
80
80
48
1,280
1,480
1,600
1,640
2,320
3,120
480
400
480
800
80
80
48
Rev. 1.5 June 2005
DDR SDRAM
(V
DD
=2.7V, T = 10°C)
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Optional
Notes