K9F1G08D0M SAMSUNG [Samsung semiconductor], K9F1G08D0M Datasheet - Page 12

• Manufacturer Part Number: K9F1G08D0M
• Description: 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
• Manufacturer: SAMSUNG [Samsung semiconductor]

K9F1G08Q0M
K9F1G08D0M
K9F1G08U0M K9F1G16U0M
VALID BLOCK
NOTE :
1. The
2. The 1st block, which is placed on 00h block address, is guaranteed to be a valid block, does not require Error Correction up to 1K program/erase
AC TEST CONDITION
(K9F1GXXX0M-XCB0 :TA=0 to 70 C, K9F1GXXX0M-XIB0:TA=-40 to 85 C
K9F1GXXQ0M : Vcc=1.70V~1.95V, K9F1GXXD0M : Vcc=2.4V~2.9V , K9F1GXXU0M : Vcc=2.7V~3.6V unless otherwise noted)
CAPACITANCE
NOTE : Capacitance is periodically sampled and not 100% tested.
MODE SELECTION
NOTE : 1. X can be V
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Levels
K9F1GXXQ0M:Output Load (Vcc:1.8V +/-10%)
K9F1GXXD0M:Output Load (Vcc
K9F1GXXU0M:Output Load (Vcc:3.0V +/-10%)
K9F1GXXU0M:Output Load (Vcc:3.3V +/-10%)
Valid Block Number
Input/Output Capacitance
Input Capacitance
blocks is presented with both cases of invalid blocks considered. Invalid blocks are defined as blocks that contain one or more bad bits. Do not erase
or program factory-marked bad blocks
cycles.
CLE
H
H
X
X
X
X
X
L
L
L
L
K9F1GXXX0M
2. WP and PRE should be biased to CMOS high or CMOS low for standby.
Parameter
Item
ALE
X
H
H
X
X
X
X
L
L
L
L
IL
(1)
Parameter
or V
may include invalid blocks when first shipped. Additional invalid blocks may develop while being used. The number of valid
(
T
IH.
A
K9F1G16Q0M
K9F1G16D0M
=25 C, V
CE
H
X
X
X
X
L
L
L
L
L
L
Q
:2.65V +/-10%)
.
CC
Refer to the attached technical notes for appropriate management of invalid blocks.
=1.8V/2.65V/3.3V, f=1.0MHz)
Symbol
Symbol
N
C
C
WE
H
VB
I/O
X
X
X
X
X
IN
1 TTL GATE and CL=30pF 1 TTL GATE and CL=30pF 1 TTL GATE and CL=50pF
Test Condition
RE
K9F1GXXQ0M
H
H
H
H
H
H
X
X
X
X
0V to Vcc
V
V
Vcc/2
1004
IN
5ns
IL
Min
=0V
-
=0V
12
0V/V
WP
H
H
H
H
H
X
X
X
X
L
CC
(2)
0V/V
PRE
Typ.
Min
X
X
X
X
X
X
X
X
X
X
-
-
-
CC
K9F1GXXD0M
(2)
0V to Vcc
Vcc/2
5ns
Read Mode
Write Mode
During Read(Busy)
During Program(Busy)
During Erase(Busy)
Write Protect
Stand-by
Data Input
Data Output
-
FLASH MEMORY
1024
Max
Max
10
10
Command Input
Address Input(4clock)
Command Input
Address Input(4clock)
1 TTL GATE and CL=100pF
Mode
K9F1GXXU0M
0.4V to 2.4V
1.5V
5ns
Blocks
Unit
Unit
pF
pF