M464S3323BN0-C1H/L1H SAMSUNG [Samsung semiconductor], M464S3323BN0-C1H/L1H Datasheet - Page 4

• Manufacturer Part Number: M464S3323BN0-C1H/L1H
• Description: 144pin SDRAM SODIMM
• Manufacturer: SAMSUNG [Samsung semiconductor]

Note :
ABSOLUTE MAXIMUM RATINGS
DC OPERATING CONDITIONS AND CHARACTERISTICS
Recommended operating conditions (Voltage referenced to V
CAPACITANCE
M464S3323BN0
Notes :
Voltage on any pin relative to Vss
Voltage on V
Storage temperature
Power dissipation
Short circuit current
Address (A0 ~ A11, BA0 ~ BA1)
RAS, CAS, WE
CKE (CKE0 ~ CKE1)
Clock (CLK0 ~ CLK1)
CS (CS0 ~ CS1)
DQM (DQM0 ~ DQM7)
DQ (DQ0 ~ DQ63)
Supply voltage
Input logic high voltage
Input logic low voltage
Output logic high voltage
Output logic low voltage
Input leakage current
Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
1. V
2. V
3. Any input 0V
Parameter
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
IH
IL
DD
(min) = -2.0V AC. The undershoot voltage duration is
Parameter
(max) = 5.6V AC. The overshoot voltage duration is
supply relative to Vss
Pin
(V
DD
V
IN
= 3.3V, T
V
DDQ.
A
= 23 C, f = 1MHz, V
V
Symbol
DD
V
V
V
V
, V
I
OH
OL
LI
IH
IL
DDQ
V
V
Symbol
Shrink-TSOP
Symbol
DD
C
C
C
C
IN
C
C
T
C
DQM
ADD
OUT
CKE
CLK
, V
I
P
, V
STG
CS
OS
IN
Min
-0.3
-10
3.0
2.0
2.4
D
REF
OUT
-
DDQ
SS
= 1.4V
= 0V, T
3ns.
3ns.
A
= 0 to 70 C)
200 mV)
Typ
3.3
3.0
0
-
-
-
Min
40
40
20
20
20
5
8
V
-55 ~ +150
DDQ
-1.0 ~ 4.6
-1.0 ~ 4.6
144pin SDRAM SODIMM
Max
3.6
0.8
0.4
Value
10
-
+0.3
16
50
Max
80
80
40
32
40
10
13
Unit
uA
V
V
V
V
V
I
OH
I
OL
Unit
mA
W
Unit
V
V
C
Note
pF
pF
pF
pF
pF
pF
pF
= -2mA
= 2mA
1
2
3