M368L2923BTM-CCC SAMSUNG [Samsung semiconductor], M368L2923BTM-CCC Datasheet - Page 12

• Manufacturer Part Number: M368L2923BTM-CCC
• Description: DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II
• Manufacturer: SAMSUNG [Samsung semiconductor]

9.0 DDR SDRAM IDD spec table
9.1 M368L3324BT(U) [ (32M x 16) * 4, 256MB Non ECC Module ]
9.2 M368L6523BT(U) [ (64M x 8) * 8, 512MB Non ECC Module ]
256MB, 512MB, 1GB Unbuffered DIMM
IDD6
IDD6
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
Symbol
Symbol
IDD4W
IDD4W
IDD2Q
IDD3N
IDD4R
IDD2P
IDD2Q
IDD3P
IDD3N
IDD4R
IDD7A
IDD2P
IDD2F
IDD3P
IDD7A
IDD2F
IDD0
IDD1
IDD5
IDD0
IDD1
IDD5
Low power
Low power
Normal
Normal
CC(DDR400@CL=3)
CC(DDR400@CL=3)
1,320
1,480
1,600
1,920
2,120
3,440
1,120
1,060
1,800
240
200
440
760
660
760
120
100
220
400
920
40
40
24
20
20
12
B3(DDR333@CL=2.5)
B3(DDR333@CL=2.5)
1,000
1,200
1,320
1,520
2,000
3,200
1,000
1,620
240
200
240
400
500
620
120
100
120
200
780
860
40
40
24
20
20
12
Rev. 1.1 June 2005
Unit
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
DDR SDRAM
(V
(V
DD
DD
=2.7V, T = 10°C)
=2.7V, T = 10°C)
Optional
Optional
Notes
Notes