M464S3254DTS-L1H/C1H SAMSUNG [Samsung semiconductor], M464S3254DTS-L1H/C1H Datasheet - Page 4

• Manufacturer Part Number: M464S3254DTS-L1H/C1H
• Description: 32Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh,3.3V Synchronous DRAMs with SPD
• Manufacturer: SAMSUNG [Samsung semiconductor]

ABSOLUTE MAXIMUM RATINGS
Note :
M464S3254DTS
DC OPERATING CONDITIONS AND CHARACTERISTICS
Recommended operating conditions (Voltage referenced to V
Notes :
CAPACITANCE
Voltage on any pin relative to Vss
Voltage on V
Storage temperature
Power dissipation
Short circuit current
Supply voltage
Input high voltage
Input low voltage
Output high voltage
Output low voltage
Input leakage current
Input capacitance (A
Input capacitance (RAS, CAS, WE)
Input capacitance (CKE0 ~ CKE1)
Input capacitance (CLK0 ~ CLK1)
Input capacitance (CS0 ~ CS1)
Input capacitance (DQM0 ~ DQM7)
Data input/output capacitance (DQ0 ~ DQ63)
Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
1. V
2. V
3. Any input 0V
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
Parameter
IH
IL
DD
(min) = -2.0V AC. The undershoot voltage duration is
Parameter
(max) = 5.6V AC.The overshoot voltage duration is
supply relative to Vss
Parameter
0
~ A
(V
DD
V
12
IN
, BA0 ~ BA1)
= 3.3V, T
V
DDQ
.
A
Symbol
= 23 C, f = 1MHz, V
V
V
V
V
V
I
DD
OH
OL
LI
IH
IL
V
V
Symbol
Symbol
DD
IN
C
Min
-0.3
C
C
C
C
C
C
T
3.0
2.0
2.4
-10
, V
I
OUT
, V
P
-
STG
IN1
IN2
IN3
IN4
IN5
IN6
OS
D
REF
OUT
DDQ
SS
= 1.4V
= 0V, T
3ns.
3ns.
A
Typ
3.3
3.0
200 mV)
= 0 to 70 C)
0
-
-
-
Min
25
25
15
15
15
10
13
V
DDQ
-55 ~ +150
Max
-1.0 ~ 4.6
-1.0 ~ 4.6
3.6
0.8
0.4
10
-
Value
+0.3
50
PC133/PC100 SODIMM
8
Max
45
45
25
21
25
12
18
Unit
Rev. 0.0 Jan. 2002
uA
V
V
V
V
V
I
I
OH
OL
Unit
mA
W
V
V
Note
Unit
C
= -2mA
= 2mA
pF
pF
pF
pF
pF
pF
pF
1
2
3