M464S1654BT1 SAMSUNG [Samsung semiconductor], M464S1654BT1 Datasheet - Page 3

• Manufacturer Part Number: M464S1654BT1
• Description: 16Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD
• Manufacturer: SAMSUNG [Samsung semiconductor]

TYPICAL CHARACTERISTICS
–500
–400
–300
–200
–100
–500
–400
–300
–200
–100
2.0
1.5
1.0
0.5
0
0
0
Duty-Cycle-Output Current Characteristics
Grounded Emitter Transfer Characteristics
0
0
0
Thermal Derating Factor Characteristics
•The output current values
•Repeated frequency ≥ 10Hz
•The value in the circle represents the
•Ta = 25°C
represent the current per circuit.
value of the simultaneously-operated circuit.
7-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
Ambient temperature Ta (°C)
V
V
0.2
20
S
S
-V
= 20V
25
Ta = 75°C
Ta = 25°C
Ta = –20°C
Input voltage V
O
= 4V
Duty cycle (%)
0.4
40
50
0.6
60
I
(V)
75
0.8
80
100
100
1.0
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
–500
–400
–300
–200
–100
–500
–400
–300
–200
–100
500
400
300
200
100
0
0
0
Duty-Cycle-Output Current Characteristics
0
0
0
Output saturation voltage V
•The output current values
•Repeated frequency ≥ 10Hz
•The value in the circle represents the
represent the current per circuit.
value of the simultaneously-operated circuit.
Clamping Diode Characteristics
Output Current Characteristics
Forward bias voltage V
V
V
0.5
Output Saturation Voltage
20
S
I
= 2.4V
0.5
= 10V
Ta = 75°C
Ta = 25°C
Ta = –20°C
Ta = 75°C
Ta = 25°C
Ta = –20°C
Duty cycle (%)
1.0
40
1.0
1.5
60
CE
1.5
F
2.0
80
(V)
(sat) (V)
•Ta = 75°C
M63800FP
100
2.0
2.5
Aug. 1999