K9F1208D0A SAMSUNG [Samsung semiconductor], K9F1208D0A Datasheet - Page 11

• Manufacturer Part Number: K9F1208D0A
• Description: 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
• Manufacturer: SAMSUNG [Samsung semiconductor]

K9F1208D0A
K9F1208U0A
ABSOLUTE MAXIMUM RATINGS
NOTE :
1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, K9F12XXX0A-XCB0
Voltage on any pin relative to V
Temperature Under Bias
Storage Temperature
Short Circuit Current
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Supply Voltage
Supply Voltage
Supply Voltage
Maximum DC voltage on input/output pins is V
Parameter
Parameter
Symbol
V
V
V
K9F1216D0A
K9F1216U0A
CCQ
CC
SS
K9F12XXX0A-XCB0
K9F12XXX0A-XIB0
K9F12XXX0A-XCB0
K9F12XXX0A-XIB0
SS
Min
2.4
2.4
0
K9F12XXD0A(2.65V)
CC,
Typ.
2.65
2.65
+0.3V which, during transitions, may overshoot to V
0
:
T
A
Symbol
V
=0 to 70 C, K9F12XXX0A-XIB0
V
T
T
IN/OUT
V
Ios
BIAS
CCQ
STG
CC
Max
2.9
2.9
0
11
Min
2.7
2.7
0
3.3V/2.65V DEVICE
K9F12XXU0A(3.3V)
-0.6 to + 4.6
-0.6 to + 4.6
-0.6 to + 4.6
Rating
Typ.
3.3
3.3
0
:
T
A
Max
3.6
3.6
=-40 to 85 C)
0
CC
+2.0V for periods <20ns.
Unit
Unit
mA
V
C
C
V
V
V
FLASH MEMORY