K9F1208B0C SAMSUNG [Samsung semiconductor], K9F1208B0C Datasheet - Page 12

• Manufacturer Part Number: K9F1208B0C
• Description: 64M x 8 Bits NAND Flash Memory
• Manufacturer: SAMSUNG [Samsung semiconductor]

NOTE NOTE: 1.Typical Program time is defined as the time within which more than 50% of the whole pages are programmed at Vcc of 3.3V and 25’C
Program / Erase Characteristics
K9F1208U0C
K9F1208R0C
AC TIMING CHARACTERISTICS FOR COMMAND / ADDRESS / DATA INPUT
NOTE: The transition of the corresponding control pins must occur only once while WE is held low.
CLE setup Time
CLE Hold Time
CE setup Time
CE Hold Time
WE Pulse Width
ALE setup Time
ALE Hold Time
Data setup Time
Data Hold Time
Write Cycle Time
WE High Hold Time
Program Time
Number of Partial Program Cycles
in the Same Page
Block Erase Time
K9F1208B0C
Parameter
Parameter
Spare Array
Main Array
Symbol
t
PROG
t
Nop
BERS
12
(1)
Symbol
t
t
t
WP
t
t
t
t
t
t
t
t
CLS
CLH
ALS
ALH
WC
WH
CS
CH
DS
DH
Min
(1)
-
-
-
-
Min
Typ
200
21
31
21
21
20
42
15
5
5
5
5
2
-
-
FLASH MEMORY
Max
500
1
2
3
Max
-
-
-
-
-
-
-
-
-
-
-
cycle
cycle
Unit
ms
µs
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns