KC817 KEXIN [Guangdong Kexin Industrial Co.,Ltd], KC817 Datasheet

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KC817

Manufacturer Part Number

KC817

Description

NPN Silicon AF Transistors

Manufacturer

KEXIN [Guangdong Kexin Industrial Co.,Ltd]

Datasheet

1.KC817.pdf (1 pages)

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Download datasheet (41Kb)

SMD Type

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current (DC)

power dissipation

Junction temperature

Storage temperature

Marking

Absolute Maximum Ratings Ta = 25

Collector-to-base breakdown voltage

Collector-to-emitter breakdown voltage

Emitter-to-base breakdown voltage

Collector cutoff current

Emitter cutoff current

DC current gain *

Collector saturation voltage *

Base emitter on voltage

Output Capacitance

Transition frequency

* Pulsed: PW

Features

For general AF applications.

High collector current.

High current gain.

Low collector-emitter saturation voltage.

Electrical Characteristics Ta = 25

Marking

NO.

hFE

KC817-16

100 250

350 ìs, duty cycle

8FA

Parameter

Parameter

KC817-25

160 400

NPN Silicon AF Transistors

8FB

2%

KC817(BC817)

KC817-40

250 630

Symbol

8FC

V

V

V

V

V

I

CE(sat)

I

BE(on)

C

Symbol

h

CES

EBO

CBO

CEO

EBO

f

V

V

V

FE

T

ob

T

P

CBO

CEO

EBO

I

T

stg

C

D

j

I

I

I

V

V

I

I

I

V

V

I

C

C

E

C

C

C

C

CB

EB

CE

CB

= 10

= 10 mA, I

= 10

= 100 mA, V

= 300 mA, V

= 500 mA, I

= 10 mA, V

=1V,I

=10V,f=1MHz

= 4 V, I

= 25 V, V

-65 to +150

Rating

C

A, I

A,V

800

310

150

=300mA

50

45

5

C

Testconditons

B

C

BE

= 0

BE

CE

B

= 0

= 0

CE

CE

= 50 mA

= 0

= 0

= 5 V, f = 50 MHz

= 1 V

= 1 V

Unit

mW

mA

V

V

V

1

0.95

SOT-23

3

-0.1

+0.1

2.9

0.4

1.9

+0.1

-0.1

+0.1

-0.1

+0.1

-0.1

Min

100

50

45

60

www.kexin.com.cn

5

Transistors

2

Typ

100

Max

100

100

630

1.Base

2.Emitter

0.7

1.2

3.collector

12

Unit: mm

0.1

+0.05

-0.01

MHz

Unit

nA

nA

pF

V

V

V

V

V

1

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