R1WV3216RBG-7SI RENESAS [Renesas Technology Corp], R1WV3216RBG-7SI Datasheet - Page 14
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R1WV3216RBG-7SI
Manufacturer Part Number
R1WV3216RBG-7SI
Description
32Mb Advanced LPSRAM (2M wordx16bit)
Manufacturer
RENESAS [Renesas Technology Corp]
Datasheet
1.R1WV3216RBG-7SI.pdf
(16 pages)
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REJ03C0215-0300Z Rev.3.00 2008.03.03
page 14 of 15
Note 1. Typical parameter indicates the value for the center of distribution at Vcc=3.0V (Ta= 25ºC) and not 100% tested.
R1W V3216R Series
Chip deselect to data retention time
Operation recovery time
Vcc for data retention
Data retention current
2. Typical parameter indicates the value for the center of distribution at Vcc=3.0V (Ta= 40ºC) and not 100% tested.
3. BYTE# pin is supported by only 52-pin µTSOP type.
4. Also CS2 controls address buffer, WE# buffer ,CS1# buffer ,OE# buffer ,LB# ,UB# buffer and Din buffer .If CS2
controls data retention mode,Vin levels (address, WE# ,OE#,CS1#,LB#,UB#,I/O) can be in the high impedance
state. If CS1# controls data retention mode, CS2 must be CS2 ≥ Vcc-0.2V or 0V
levels (address, WE# ,OE#,CS1#,LB#,UB#,I/O) can be in the high impedance state.
Parameter
Data Retention Characteristics
Symbol
Icc
t
V
CDR
t
DR
R
DR
Min.
2.0
0
5
-
-
-
-
Typ.
4
7
-
-
-
-
-
*1
*2
Max.
3.6
12
24
50
80
-
-
Unit
ms
µA
µA
µA
µA
ns
V
V in ≥ 0V,
BYTE#≥Vcc-0.2V or BYTE#≤0.2V
(1) 0V ≤ CS2 ≤ 0.2V or
(2) CS2 ≥ Vcc-0.2V,
(3) LB# =UB# ≥ Vcc-0.2V,
~+25ºC
~+40ºC
~+70ºC
~+85ºC
≤
CS1# ≥ Vcc-0.2V or
CS2 ≥ Vcc-0.2V,
CS1# ≤ 0.2V
See retention waveform
CS2
Test conditions
≤
Vcc=3.0V,Vin≥0V,
BYTE# ≥ Vcc-0.2V or
BYTE# ≤ 0.2V
(1) 0V ≤ CS2 ≤ 0.2V or
(2) CS2 ≥ Vcc-0.2V,
(3) LB# =UB# ≥Vcc-0.2V,
Average value
0.2V. The other input
CS1# ≥ Vcc-0.2V or
CS2 ≥ Vcc-0.2V,
CS1# ≤ 0.2V
*3,4