K4H560838F-UC SAMSUNG [Samsung semiconductor], K4H560838F-UC Datasheet - Page 14
K4H560838F-UC
Manufacturer Part Number
K4H560838F-UC
Description
256Mb F-die DDR400 SDRAM Specification
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
1.K4H560838F-UC.pdf
(19 pages)
Available stocks
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Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
K4H560838F-UCCC
Manufacturer:
SAMSUNG
Quantity:
218
DDR SDRAM 256Mb F-die (x8, x16)
Maximum peak amplitude allowed for overshoot
Maximum peak amplitude allowed for undershoot
The area between the overshoot signal and VDD must be less than or equal to
The area between the undershoot signal and GND must be less than or equal to
Overshoot/Undershoot specification for Data, Strobe, and Mask Pins
DQ/DM/DQS AC overshoot/Undershoot Definition
-1
-2
-3
-4
-5
5
4
3
2
1
0
Maximum Amplitude = 1.2V
0 0.5 1.0 1.42 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 5.68 6.0 6.5 7.0
Parameter
Area = 2.5V-ns
VDDQ
Overshoot
Tims(ns)
Maximum Amplitude = 1.2V
undershoot
GND
Rev. 1.1 August. 2003
DDR SDRAM
Specification
DDR400
2.5V-ns
2.5V-ns
1.2V
1.2V