K4H560438J SAMSUNG [Samsung semiconductor], K4H560438J Datasheet - Page 15
K4H560438J
Manufacturer Part Number
K4H560438J
Description
256Mb J-die DDR SDRAM Specification
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
1.K4H560438J.pdf
(24 pages)
- Current page: 15 of 24
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K4H560438J
K4H560838J
K4H561638J
18.0 Overshoot/Undershoot specification for Data, Strobe and Mask Pins
Maximum peak amplitude allowed for overshoot
Maximum peak amplitude allowed for undershoot
The area between the overshoot signal and V
The area between the undershoot signal and GND must be less than or equal to
DQ/DM/DQS AC overshoot/Undershoot Definition
-1
-2
-3
-4
-5
5
4
3
2
1
0
Parameter
Maximum Amplitude = 1.2V
0 0.5 1.0 1.42 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 5.68 6.0 6.5 7.0
DD
V
DDQ
must be less than or equal to
Area
Overshoot
15 of 24
Tims(ns)
Maximum Amplitude = 1.2V
undershoot
GND
DDR400
2.4 V-ns
2.4 V-ns
1.2 V
1.2 V
Rev. 1.12 August 2008
Specification
DDR333
2.4 V-ns
2.4 V-ns
1.2 V
1.2 V
DDR SDRAM
DDR200/266
2.4 V-ns
2.4 V-ns
1.2 V
1.2 V
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