K4S561633C-P1L SAMSUNG [Samsung semiconductor], K4S561633C-P1L Datasheet - Page 5

• Manufacturer Part Number: K4S561633C-P1L
• Description: 16Mx16 SDRAM 54CSP
• Manufacturer: SAMSUNG [Samsung semiconductor]

K4S561633C-R(B)L/N/P
DC CHARACTERISTICS
Recommended operating conditions(Voltage referenced to V
Notes :
1. Measured with outputs open.
2. Refresh period is 64ms.
3. K4S561633C-R(B)L**
4. K4S561633C-R(B)N**
5. K4S561633C-R(B)P**
6. Unless otherwise noted, input swing IeveI is CMOS(V
Operating Current
(One Bank Active)
Precharge Standby Current
in power-down mode
Precharge Standby Current
in non power-down mode
Active Standby Current
in power-down mode
Active Standby Current
in non power-down mode
(One Bank Active)
Operating Current
(Burst Mode)
Refresh Current
Self Refresh Current
Parameter
Symbol
I
I
I
I
CC2
CC3
I
CC2
I
I
CC3
I
C C 2
C C 3
I
CC2
CC3
I
I
I
CC1
CC4
CC5
CC6
PS
NS
PS
NS
P
N
P
N
CKE V
CKE & CLK V
CKE V
Input signals are changed one time during 20ns
CKE V
Input signals are stable
CKE V
CKE & CLK V
CKE V
Input signals are changed one time during 20ns
CKE V
Input signals are stable
t
CKE 0.2V
Burst length = 1
t
I
I
Page burst
4Banks Activated
t
RC
RC
O
O
CCD
= 0 mA
= 0 mA
t
= 2CLKs
t
RC
R C
IL
IH
IH
IL
IH
IH
(min)
(min)
(max), t
(max), t
(min), CS
(min), CLK V
(min), CS
(min), CLK V
IH
IL
IL
Test Condition
/V
(max), t
(max), t
CC
CC
IL
SS
=V
= 10ns
= 10ns
= 0V, T
V
V
DDQ
I H
I H
CC
CC
IL
IL
(min), t
(min), t
(max), t
(max), t
/V
=
=
A
SSQ)
=Commercial, Extended, Industrial Temperature)
CC
CC
CC
CC
-R(B)N
-R(B)P
-R(B)L
= 10ns
= 10ns
=
=
130
185
-75
90
Version
-1H
130
185
800
0.5
0.5
85
15
10
25
25
6
6
CMOS SDRAM
Rev. 1.4 Dec. 2002
105
165
-1L
85
Unit
mA
mA
mA
mA
mA
mA
mA
mA
uA
Note
1
1
2
3
4