K4S643233H-C SAMSUNG [Samsung semiconductor], K4S643233H-C Datasheet - Page 5

• Manufacturer Part Number: K4S643233H-C
• Description: Mobile-SDRAM
• Manufacturer: SAMSUNG [Samsung semiconductor]

DC CHARACTERISTICS
K4S643233H - F(H)E/N/G/C/L/F
Recommended operating conditions (Voltage referenced to V
NOTES:
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Internal TCSR can be supported.
4. K4S643233H-F(H)E/C**
5. K4S643233H-F(H)N/L**
6. K4S643233H-F(H)G/F**
7. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ).
Operating Current
(One Bank Active)
Precharge Standby Current
in power-down mode
Precharge Standby Current
in non power-down mode
Active Standby Current
in power-down mode
Active Standby Current
in non power-down mode
(One Bank Active)
Operating Current
(Burst Mode)
Refresh Current
Self Refresh Current
In commercial Temp : Max 40°C/Max 70°C, In extended Temp : Max 40°C/Max 85°C
Parameter
Symbol
I
I
I
I
CC2
CC3
CC2
I
CC3
I
I
I
CC2
CC2
CC3
CC3
I
I
I
I
CC
CC
CC
CC1
NS
NS
PS CKE & CLK ≤ V
PS CKE & CLK ≤ V
4
5
6
P
N
P
N
CKE ≤ V
CKE ≥ V
Input signals are changed one time during
20ns
CKE ≥ V
Input signals are stable
CKE ≤ V
CKE ≥ V
Input signals are changed one time during
20ns
CKE ≥ V
Input signals are stable
t
CKE ≤ 0.2V
t
I
Page burst
4Banks Activated
t
RC
Burst length = 1
I
RC
O
O
CCD
= 0 mA
= 0 mA
≥ t
≥ t
= 2CLKs
RC
RC
IL
IH
IH
IL
IH
IH
(min)
(min)
(max), t
(max), t
(min), CS ≥ V
(min), CLK ≤ V
(min), CS ≥ V
(min), CLK ≤ V
Test Condition
IL
IL
(max), t
(max), t
-G/F
CC
CC
= 10ns
= 10ns
SS
IH
IH
= 0V, T
CC
CC
IL
IL
(min), t
(min), t
1/2 of Full Array
1/4 of Full Array
(max), t
(max), t
Internal TCSR
= ∞
= ∞
-E/C
-N/L
Full Array
A
CC
CC
= -25 to 85°C for Extended, -25 to 70°C for Commercial)
CC
CC
= 10ns
= 10ns
= ∞
= ∞
100
145
-60
85
Max 40
235
210
195
135
-75
80
95
Version
1500
350
0.5
0.5
22
22
11
8
5
5
Mobile-SDRAM
-1H
120
Max 85/70
75
75
350
290
270
120
-1L
75
75
February 2004
Unit
mA
mA
mA
mA
mA
mA
mA
mA
uA
°C
uA
Note
1
1
2
4
5
3
6