K4S643233F SAMSUNG [Samsung semiconductor], K4S643233F Datasheet

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K4S643233F

Manufacturer Part Number
K4S643233F
Description
2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet

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K4S643233F-S(D)E/N/I/P
CMOS SDRAM
2Mx32
Mobile SDRAM
90FBGA
(VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V)
Revision 1.5
December 2002
Rev. 1.5 Dec. 2002

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K4S643233F Summary of contents

Page 1

... K4S643233F-S(D)E/N/I/P (VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V) 2Mx32 Mobile SDRAM 90FBGA Revision 1.5 December 2002 CMOS SDRAM Rev. 1.5 Dec. 2002 ...

Page 2

... CKE *Samsung Electronics reserves the right to change products or specification without notice. GENERAL DESCRIPTION The K4S643233F is 67,108,864 bits synchronous high data rate Dynamic RAM organized 524,288 words by 32 bits, fabri- cated with SAMSUNG s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock ...

Page 3

... K4S643233F-S(D)E/N/I/P 90-Ball FBGA Package Dimension and Pin Configuration < Bottom View *2: Top View Substrate(4Layer) *1: Bottom View < Top View #A1 Ball Origin Indicator *1 > E > CMOS SDRAM *2 < Top View ...

Page 4

... K4S643233F-S(D)E/N/I/P ABSOLUTE MAXIMUM RATINGS Parameter Voltage on any pin relative to Vss Voltage on V supply relative to Vss D D Storage temperature Power dissipation Short circuit current Notes : Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to recommended operating condition. ...

Page 5

... CC4 Refresh Current I CC5 Self Refresh Current I CC6 Notes : 1. Measured with outputs open. 2. Refresh period is 64ms. 3. K4S643233F-S(D)E/I** 4. K4S643233F-S(D)N/P** 5. Unless otherwise noted, input swing IeveI is CMOS for Extended, - for Industrial Test Condition Burst length = (min) ...

Page 6

... K4S643233F-S(D)E/N/I/P AC OPERATING TEST CONDITIONS Parameter AC input levels (Vih/Vil) Input timing measurement reference level Input rise and fall time Output timing measurement reference level Output load condition Output 870 (Fig output load circuit OPERATING AC PARAMETER Parameter Row active to row active delay ...

Page 7

... K4S643233F-S(D)E/N/I/P AC CHARACTERISTICS (AC operating conditions unless otherwise noted) Parameter CAS latency=3 CLK cycle time CAS latency=2 CAS latency=1 CAS latency=3 CLK to valid output delay CAS latency=2 CAS latency=1 CAS latency=3 Output data hold time CAS latency=2 CAS latency=1 CLK high pulse width ...

Page 8

... K4S643233F-S(D)E/N/I/P SIMPLIFIED TRUTH TABLE COMMAND Register Mode Register Set Auto Refresh Entry Refresh Self Refresh Bank Active & Row Addr. Read & Auto Precharge Disable Column Address Auto Precharge Enable Write & Auto Precharge Disable Column Address Auto Precharge Enable Burst Stop ...

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