K4H1G0638C-UC/LA2 SAMSUNG [Samsung semiconductor], K4H1G0638C-UC/LA2 Datasheet - Page 22
K4H1G0638C-UC/LA2
Manufacturer Part Number
K4H1G0638C-UC/LA2
Description
Stacked 1Gb C-die DDR SDRAM Specification
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
1.K4H1G0638C-UCLA2.pdf
(23 pages)
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DDR SDRAM stacked 1Gb C-die (x4/x8)
Figure 4. I/V characteristics for input/output buffers:Pull up(above) and pull down(below)
90
80
70
60
50
40
30
20
10
-10
-20
-30
-40
-50
-60
-70
-80
-90
0
0
0.0
0.0
Pulldown Characteristics for Weak Output Driver
Pullup Characteristics for Weak Output Driver
1.0
1.0
2.0
2.0
Vout(V)
Vout(V)
Rev. 1.1 June. 2005
DDR SDRAM
Maximum
Typical High
Typical Low
Minumum
Typical Low
Typical High
Maximum
Minimum
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