K4H510838D-LA2 SAMSUNG [Samsung semiconductor], K4H510838D-LA2 Datasheet - Page 24

• Manufacturer Part Number: K4H510838D-LA2
• Description: 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
• Manufacturer: SAMSUNG [Samsung semiconductor]

DDR SDRAM 512Mb D-die (x8, x16)
Voltage
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
(V)
Typical
10.3
13.6
16.9
19.6
22.3
24.7
26.9
29.0
30.6
31.8
32.8
33.5
34.0
34.3
34.5
34.8
35.1
35.4
35.6
35.8
36.1
36.3
36.5
36.7
36.8
Low
3.4
6.9
Pulldown Current (mA)
Typical
High
15.1
18.7
22.1
25.0
28.2
31.3
34.1
36.9
39.5
42.0
44.4
46.6
48.6
50.5
52.2
53.9
55.0
56.1
57.1
57.7
58.2
58.7
59.2
59.6
11.4
3.8
7.6
Table 9. Weak Driver Characteristics
Minimum
10.4
13.0
15.7
18.2
20.8
22.4
24.1
25.4
26.2
26.6
26.8
27.0
27.2
27.4
27.7
27.8
28.0
28.1
28.2
28.3
28.3
28.4
28.5
28.6
2.6
5.2
7.8
Maximum
14.6
19.2
23.6
28.0
32.2
35.8
39.5
43.2
46.7
50.0
53.1
56.1
58.7
61.4
63.5
65.6
67.7
69.8
71.6
73.3
74.9
76.4
77.7
78.8
79.7
5.0
9.9
Typical
-10.3
-13.6
-16.9
-19.4
-21.5
-23.3
-24.8
-26.0
-27.1
-27.8
-28.3
-28.6
-28.7
-28.9
-28.9
-29.0
-29.2
-29.2
-29.3
-29.5
-29.5
-29.6
-29.7
-29.8
-29.9
Low
-3.5
-6.9
Typical
pullup Current (mA)
-12.0
-15.7
-19.3
-22.9
-26.5
-30.1
-33.6
-37.1
-40.3
-43.1
-45.8
-48.4
-50.7
-52.9
-55.0
-56.8
-58.7
-60.0
-61.2
-62.4
-63.1
-63.8
-64.4
-65.1
-65.8
High
-4.3
-8.2
Rev. 0.3 June. 2005
Minimum
DDR SDRAM
-10.4
-13.0
-15.7
-18.2
-20.4
-21.6
-21.9
-22.1
-22.2
-22.3
-22.4
-22.6
-22.7
-22.7
-22.8
-22.9
-22.9
-23.0
-23.0
-23.1
-23.2
-23.2
-23.3
-23.3
-2.6
-5.2
-7.8
Preliminary
Maximum
-14.6
-19.2
-23.6
-28.0
-32.2
-35.8
-39.5
-43.2
-46.7
-50.0
-53.1
-56.1
-58.7
-61.4
-63.5
-65.6
-67.7
-69.8
-71.6
-73.3
-74.9
-76.4
-77.7
-78.8
-79.7
-5.0
-9.9