K4S51163PF-F1L SAMSUNG [Samsung semiconductor], K4S51163PF-F1L Datasheet - Page 6
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K4S51163PF-F1L
Manufacturer Part Number
K4S51163PF-F1L
Description
8M x 16Bit x 4 Banks Mobile-SDRAM
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
1.K4S51163PF-F1L.pdf
(12 pages)
AC OPERATING TEST CONDITIONS
K4S51163PF-Y(P)F
Output
AC input levels (Vih/Vil)
Input timing measurement reference level
Input rise and fall time
Output timing measurement reference level
Output load condition
Figure 1. DC Output Load Circuit
10.6KΩ
Parameter
1.8V
13.9KΩ
20pF
VOH (DC) = VDDQ - 0.2V, IOH = -0.1mA
VOL (DC) = 0.2V, IOL = 0.1mA
(V
DD
= 1.7V ∼ 1.95V, T
0.9 x V
6
Output
See Figure 2
0.5 x V
0.5 x V
tr/tf = 1/1
Value
A
DDQ
Figure 2. AC Output Load Circuit
= -25 to 70°C for Commercial)
DDQ
DDQ
/ 0.2
Z0=50Ω
Mobile-SDRAM
Vtt=0.5 x VDDQ
50Ω
20pF
September 2004
Unit
ns
V
V
V