K4S51163LF-YPC/L/F1H SAMSUNG [Samsung semiconductor], K4S51163LF-YPC/L/F1H Datasheet
K4S51163LF-YPC/L/F1H
Related parts for K4S51163LF-YPC/L/F1H
K4S51163LF-YPC/L/F1H Summary of contents
Page 1
... ORDERING INFORMATION Part No. K4S51163LF-Y(P)C/L/F75 K4S51163LF-Y(P)C/L/F1H K4S51163LF-Y(P)C/L/F1L - Y(P)C/L/F : Normal / Low Power, Commercial Temperature(-25°C ~ 70°C) NOTES : 1. In case of 40MHz Frequency, CL1 can be supported. 2. Samsung are not designed or manufactured for use in a device or system that is used under circumstance in which human life is potentially at stake. ...
Page 2
... K4S51153LF - Y(P)C/L/F FUNCTIONAL BLOCK DIAGRAM CLK, /CAS, /RAS, /WE, DQM, CKE /CS1 /CS0 Mobile SDRAM 16Mx16 16Mx16 DQ0~DQ15 A0~A12, BA0, BA1 2 September 2004 ...
Page 3
... CAS WE L(U)DQM DDQ Symbol Mobile SDRAM *2 < Top View > 54Ball(6x9) FBGA DQ15 VSSQ VDDQ DQ0 VDD DQ13 VDDQ VSSQ DQ2 DQ1 DQ11 VSSQ VDDQ DQ4 DQ3 DQ9 VDDQ VSSQ ...
Page 4
... DDQ DDQ -0 -0.2 - DDQ - - -2 - =0.9V ± 50 mV) REF Symbol Min C 3.0 CLK 3.0 ADD C 6.0 OUT 4 Mobile SDRAM Value Unit -1.0 ~ 3.6 V -1.0 ~ 3.6 V °C -55 ~ +150 1 Max Unit Note 2.7 V 2 -0.1mA OH 0 0.1mA Max Unit Note 6 ...
Page 5
... CLK ≤ ∞ (max Page burst 4Banks Activated t = 2CLKs CCD ≥ t (min Internal TCSR Full Array -F 1/2 of Full Array 1/4 of Full Array 5 Mobile SDRAM Version Unit Note -75 -1H - 1 110 ...
Page 6
... Figure 1. DC Output Load Circuit = 2.5V ± 0.2V -25 to 70° Value 0 0.2 DDQ 0 DDQ tr/tf = 1/1 0 DDQ See Figure 2 - 0.2V, IOH = -0.1mA DDQ Output Z0=50Ω Figure 2. AC Output Load Circuit 6 Mobile SDRAM Unit Vtt=0.5 x VDDQ 50Ω 30pF September 2004 ...
Page 7
... RAS t (max) 100 RAS t (min (min) 2 RDL t (min) tRDL + tRP DAL t (min) 1 CDL t (min) 1 BDL t (min) 1 CCD Mobile SDRAM Unit Note - CLK CLK 2 CLK 2 CLK September 2004 ...
Page 8
... 5.4 7 SAC SAC SAC t 2.5 2 2.5 2 2.5 3 2.5 3 2.0 2 1.0 1 SLZ 5 SHZ - - 8 Mobile SDRAM -1L Unit Note Min Max 9.0 1000 1 2 2.5 2 September 2004 ...
Page 9
... MRS can be issued only at all banks precharge state. A new command can be issued after 2 CLK cycles of MRS. 3. Auto refresh functions are the same as CBR refresh of DRAM. The automatical precharge without row precharge command is meant by "Auto". Auto/self refresh can be issued only at all banks precharge state. ...
Page 10
... EMRS for PASR(Partial Array Self Ref.) & DS(Driver Strength) Mode Select BA1 BA0 Mode 0 0 Normal MRS 0 1 Reserved 1 0 EMRS for Mobile SDRAM 1 1 Reserved Reserved Address A12~A10/ NOTES: 1. RFU(Reserved for future use) should stay "0" during MRS cycle. ...
Page 11
... K4S51153LF - Y(P)C/L/F Partial Array Self Refresh 1. In order to save power consumption, Mobile SDRAM has PASR option. 2. Mobile SDRAM supports 3 kinds of PASR in self refresh mode : Full Array, 1/2 of Full Array and 1/4 of Full Array. BA1=0 BA1=0 BA0=0 BA0=1 BA1=1 BA1=1 BA0=0 BA0=1 - Full Array Temperature Compensated Self Refresh 1. In order to save power consumption, Mobile-DRAM includes the internal temperature sensor and control units to control the self refresh cycle automatically according to the two temperature range : Max 40 ° ...
Page 12
... Mobile SDRAM Interleave Interleave ...