K4S511533F SAMSUNG [Samsung semiconductor], K4S511533F Datasheet - Page 10

• Manufacturer Part Number: K4S511533F
• Description: 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
• Manufacturer: SAMSUNG [Samsung semiconductor]

K4S511533F - Y(P)C/L/F
A. MODE REGISTER FIELD TABLE TO PROGRAM MODES
Register Programmed with Normal MRS
Normal MRS Mode
Register Programmed with Extended MRS
EMRS for PASR(Partial Array Self Ref.) & DS(Driver Strength)
NOTES:
1. RFU(Reserved for future use) should stay "0" during MRS cycle.
2. If A9 is high during MRS cycle, "Burst Read Single Bit Write" function will be enabled.
3. Full Page Length x16 : 64Mb(256), 128Mb(512),256Mb(512),512Mb(1024)
Function
Function
A8
A9
Address
BA1
A12~A10/AP
0
0
1
1
0
1
Address
0
0
1
1
Write Burst Length
A7
0
1
0
1
0
Test Mode
BA0
0
1
0
1
Mode Register Set
BA1
"0" Setting for Normal
Single Bit
Mode Select
Length
Burst
Reserved
Reserved
Reserved
Mode Select
BA0 ~ BA1
Type
EMRS for Mobile SDRAM
A9
MRS
BA0
0
Normal MRS
Reserved
Reserved
Mode
A12 ~ A10/AP
Reserved Address
A6
0
0
0
0
1
1
1
1
A8
0
A5
0
0
1
1
0
0
1
1
CAS Latency
A12 ~ A10/AP
RFU
A4
0
1
0
1
0
1
0
1
RFU
A7
0
A9
*1
A6
*1
0
0
1
1
Reserved
Reserved
Reserved
Reserved
Reserved
Latency
1
2
3
A8
A5
Driver Strength
0
1
0
1
A4
W.B.L
0
A9
BA1 BA0
Driver Strength
A3
*2
0
1
0
A7
10
Reserved
Reserved
Mode Select
Burst Type
Test Mode
A8
Full
1/2
0
Sequential
Interleave
A6
A3
Type
0
mal MRS
A7
for Nor-
Setting
DS
Mode
A5
A6
A2
0
0
0
0
1
1
1
1
CAS Latency
A2
0
0
0
0
1
1
1
1
A1
A4
A5
0
0
1
1
0
0
1
1
RFU
A1
0
0
1
1
0
0
1
1
A0
0
1
0
1
0
1
0
1
A4
*1
A3
Mobile SDRAM
A0
Burst Length
0
1
0
1
0
1
0
1
Size of Refreshed Array
PASR
A3
BT
Full Page
Reserved
Reserved
Reserved
1/2 of Full Array
1/4 of Full Array
A2
BT=0
Full Array
Reserved
Reserved
Reserved
Reserved
Reserved
1
2
4
8
A2
September 2004
Burst Length
PASR
*3
A1
A1
Reserved
Reserved
Reserved
Reserved
BT=1
1
2
4
8
A0
A0