K4S510732B-TC1H SAMSUNG [Samsung semiconductor], K4S510732B-TC1H Datasheet - Page 5

• Manufacturer Part Number: K4S510732B-TC1H
• Description: Stacked 512Mbit SDRAM
• Manufacturer: SAMSUNG [Samsung semiconductor]

ABSOLUTE MAXIMUM RATINGS
K4S510732B
Note :
DC OPERATING CONDITIONS
Notes :
Recommended operating conditions (Voltage referenced to V
CAPACITANCE
Clock
RAS, CAS, WE, DQM
Address
CS#, CKE#
DQ
Voltage on any pin relative to Vss
Voltage on V
Storage temperature
Power dissipation
Short circuit current
Supply voltage
Input logic high voltage
Input logic low voltage
Output logic high voltage
Output logic low voltage
Input leakage current
0
~ DQ
Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
1. V
2. V
3. Any input 0V
Parameter
8
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
IH
IL
DD
(min) = -2.0V AC. The undershoot voltage duration is
(max) = 5.6V AC. The overshoot voltage duration is
Parameter
supply relative to Vss
Pin
(V
DD
V
IN
= 3.3V, T
V
DDQ
V
Symbol
DD
.
A
V
V
V
V
, V
I
= 23 C, f = 1MHz, V
OH
OL
LI
IH
IL
DDQ
Symbol
V
C
C
C
V
Ccs
-0.3
C
Min
-10
3.0
2.0
2.4
DD
Symbol
CLK
ADD
OUT
IN
-
IN
T
, V
I
, V
P
STG
OS
D
REF
OUT
DDQ
SS
= 0V, T
=1.4V
3ns.
3ns.
Typ
A
3.3
3.0
Min
0
-
-
-
200 mV)
5.0
5.0
5.0
2.5
8.0
= 0 to 70 C)
V
DD
Max
3.6
0.8
0.4
-55 ~ +150
10
-1.0 ~ 4.6
-1.0 ~ 4.6
-
+0.3
Max
10.0
10.0
14.0
9.0
6.5
Value
50
2
Unit
uA
V
V
V
V
V
Rev. 0.0 Feb.2001
CMOS SDRAM
Unit
pF
pF
pF
pF
pF
Preliminary
I
I
OH
OL
Unit
mA
W
V
V
Note
C
= -2mA
= 2mA
1
2
3
Note