K4S640832D-TC/L10 SAMSUNG [Samsung semiconductor], K4S640832D-TC/L10 Datasheet

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K4S640832D-TC/L10

Manufacturer Part Number
K4S640832D-TC/L10
Description
64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
K4S640832D
CMOS SDRAM
64Mbit SDRAM
2M x 8Bit x 4 Banks
Synchronous DRAM
LVTTL
Revision 0.0
June 1999
* Samsung Electronics reserves the right to change products or specification without notice.
Rev. 0.0 May 1999

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K4S640832D-TC/L10 Summary of contents

Page 1

... K4S640832D * Samsung Electronics reserves the right to change products or specification without notice. 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 June 1999 CMOS SDRAM Rev. 0.0 May 1999 ...

Page 2

... ORDERING INFORMATION K4S640832D-TC/L75 K4S640832D-TC/L80 K4S640832D-TC/L1H K4S640832D-TC/L1L K4S640832D-TC/L10 66MHz(CL=2 &3) Data Input Register Column Decoder Latency & Burst Length ...

Page 3

... K4S640832D PIN CONFIGURATION (Top view) PIN FUNCTION DESCRIPTION Pin Name CLK System clock CS Chip select CKE Clock enable Address Bank select address 0 1 RAS Row address strobe CAS Column address strobe WE Write enable DQM Data input/output mask DQ ~ Data input/output ...

Page 4

... K4S640832D ABSOLUTE MAXIMUM RATINGS Parameter Voltage on any pin relative to Vss Voltage on V supply relative to Vss DD Storage temperature Power dissipation Short circuit current Note : Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to recommended operating condition. Exposure to higher than recommended voltage for extended periods of time could affect device reliability. ...

Page 5

... CC3 Operating current I CC4 (Burst mode) Refresh current I CC5 Self refresh current I CC6 Notes : 1. Measured with outputs open. 2. Refresh period is 64ms. 3. K4S640832D-TC** 4. K4S640832D-TL** 5. Unless otherwise noted, input swing IeveI is CMOS Test Condition Burst length = (min ...

Page 6

... K4S640832D AC OPERATING TEST CONDITIONS Parameter Input levels (Vih/Vil) Input timing measurement reference level Input rise and fall time Output timing measurement reference level Output load condition 3.3V Output 870 (Fig output load circuit OPERATING AC PARAMETER (AC operating conditions unless otherwise noted) Parameter ...

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... K4S640832D AC CHARACTERISTICS (AC operating conditions unless otherwise noted) Parameter CAS latency=3 CLK cycle time CAS latency=2 CAS latency=3 CLK to valid output delay CAS latency=2 CAS latency=3 Output data hold time CAS latency=2 CLK high pulse width CLK low pulse width Input setup time ...

Page 8

... K4S640832D IBIS SPECIFICATION I Characteristics (Pull-up) OH 100MHz 100MHz Voltage Min Max (V) I (mA) I (mA) 3.45 -2.4 3.3 -27.3 3.0 0.0 -74.1 2.6 -21.1 -129.2 2.4 -34.1 -153.3 2.0 -58.7 -197.0 1.8 -67.3 -226.2 1.65 -73.0 -248.0 1.5 -77.9 -269.7 1.4 -80.8 -284.3 1.0 -88.6 -344.5 0.0 -93.0 -502.4 I Characteristics (Pull-down) OL 100MHz 100MHz Voltage Min Max (V) I (mA) I (mA) 0 0.0 0.0 0.4 27.5 70.2 0.65 41.8 107.5 0.85 51.6 133.8 1 58.0 151.2 1.4 70.7 187.7 1.5 72.9 194.4 1.65 75.4 202.5 1.8 77.0 208.6 1.95 77.6 212.0 3 80.3 219.6 3.45 81.4 222 ...

Page 9

... K4S640832D V Clamp @ CLK, CKE, CS, DQM & (V) I (mA) DD 0.0 0.0 0.2 0.0 0.4 0.0 0.6 0.0 0.7 0.0 0.8 0.0 0.9 0.0 1.0 0.23 1.2 1.34 1.4 3.02 1.6 5.06 1.8 7.35 2.0 9.83 2.2 12.48 2.4 15.30 2.6 18.31 V Clamp @ CLK, CKE, CS, DQM & (V) I (mA) SS -2.6 -57.23 -2.4 -45.77 -2.2 -38.26 -2.0 -31.22 -1.8 -24.58 -1.6 -18.37 -1.4 -12.56 -1.2 -7.57 -1.0 -3.37 -0.9 -1.75 -0.8 -0.58 -0.7 -0.05 -0.6 0.0 -0.4 0.0 -0.2 0.0 0.0 0.0 Minimum V clamp current DD (Referenced Voltage I (mA) Minimum V clamp current -10 -20 -30 -40 -50 -60 Voltage I (mA) Rev. 0.0 May 1999 ...

Page 10

... K4S640832D SIMPLIFIED TRUTH TABLE Command Register Mode register set Auto refresh Entry Refresh Self refresh Bank active & row addr. Read & Auto precharge disable column address Auto precharge enable Write & Auto precharge disable Column Address Auto precharge enable Burst stop ...

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