K4H510438A-TCA0 SAMSUNG [Samsung semiconductor], K4H510438A-TCA0 Datasheet - Page 9

• Manufacturer Part Number: K4H510438A-TCA0
• Description: 128Mb DDR SDRAM
• Manufacturer: SAMSUNG [Samsung semiconductor]

128Mb DDR SDRAM
1.2 Operating Frequencies
1. Key Features
1.1 Features
•
• Bidirectional data strobe(DQS)
• Four banks operation
• Differential clock inputs(CK and CK)
• DLL aligns DQ and DQS transition with CK transition
• MRS cycle with address key programs
• All inputs except data & DM are sampled at the positive going edge of the system clock(CK)
• Data I/O transactions on both edges of data strobe
• Edge aligned data output, center aligned data input
• LDM,UDM/DM for write masking only
• Auto & Self refresh
• 15.6us refresh interval(4K/64ms refresh)
• Maximum burst refresh cycle : 8
• 66pin TSOP II package
*CL : Cas Latency
Double-data-rate architecture; two data transfers per clock cycle
Speed @CL2.5
-. Read latency 2, 2.5 (clock)
-. Burst type (sequential & interleave)
-. Burst length (2, 4, 8)
Speed @CL2
DLL jitter
- A2(DDR266A)
133MHz@CL2
±0.75ns
Table 1. Operating frequency and DLL jitter
-
- B0(DDR266B)
100MHz
133MHz
±0.75ns
- 9 -
- A0(DDR200)
100MHz
±0.8ns
-
REV. 1.0 November. 2. 2000