K4D28163HD-TC36 SAMSUNG [Samsung semiconductor], K4D28163HD-TC36 Datasheet - Page 11

• Manufacturer Part Number: K4D28163HD-TC36
• Description: 128Mbit DDR SDRAM
• Manufacturer: SAMSUNG [Samsung semiconductor]

AC INPUT OPERATING CONDITIONS
Recommended operating conditions Unless Otherwise Noted, T
DC CHARACTERISTICS
Recommended operating conditions(Voltage referenced to V
K4D28163HD
Operating Current
(One Bank Active)
Precharge Standby Current
in Power-down mode
Precharge Standby Current
in Non Power-down mode
Active Standby Current
power-down mode
Active Standby Current in
in Non Power-down mode
Note :
Note : 1. Measured with outputs open.
Operating Current
Refresh Current
Self Refresh Current
Input High (Logic 1) Voltage; DQ
Input Low (Logic 0) Voltage; DQ
Clock Input Differential Voltage; CK and CK
Clock Input Crossing Point Voltage; CK and CK
( Burst Mode)
1. V
2. The value of V
Parameter
I D
is the magnitude of the difference between the input level on CK and the input level on CK
Parameter
IX
is expected to equal 0.5*V
Symbol
I
I
I
I
I
I
I
I
CC1
CC2
CC2
CC3
CC3
CC4
CC5
CC6
P
N
P
N
Burst Lenth=2
I
CKE
CKE
t
CKE
CKE
t
t
Page Burst, All Banks activated.
t
CKE
OL
CC
CC
RC
RC
=0mA,
=
=
t
t
t
t
CC
CC
RFC
RFC
V
V
V
0.2V
VIH(min), CS
(min)
Test Condition
IL
I H
IL
(min)
(min)
(min)
(max),
(max),
DDQ
t
(min), CS
CC
Symbol
=
V
V
V
V
of the transmitting device and must track variations in the DC level of the same
t
t
t
RC
IH
ID
IX
RC
CC
IL
t
t
CC
CC
SS
(min)
=
=
=0V, V
t
t
RFC
- 11 -
RC
t
V
t
CC
CC
VIH(min),
I H
(min)
(min)
0.5*V
(min)
(min)
(min),
V
DD
A
REF
=0 to 65 C)
=3.3V+ 5%, V
Min
0.7
DDQ
-
+0.35
-0.2
200
100
130
380
250
-36
70
DDQ
Typ
=2.5V+ 5%,T
-
-
-
-
190
120
350
220
-40
65
90
Version
5
2
0.5*V
128M DDR SDRAM
V
V
REF
DDQ
170
110
310
210
-50
A
60
75
Max
=0 to 65 C)
DDQ
-
-0.35
+0.6
Rev. 1.4(Aug. 2002)
+0.2
165
280
200
-60
60
70
90
Unit
V
V
V
V
Unit Note
mA
mA
mA
mA
mA
mA
mA
mA
Note
1
2
1