AM49DL640BH56IS SPANSION [SPANSION], AM49DL640BH56IS Datasheet - Page 3

• Manufacturer Part Number: AM49DL640BH56IS
• Description: 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
• Manufacturer: SPANSION [SPANSION]

Am49DL640BH
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
Am29DL640H 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous
Operation Flash Memory and 32 Mbit (2 M x 16-Bit) Pseudo Static RAM with Page Mode
DISTINCTIVE CHARACTERISTICS
MCP Features
Flash Memory Features
ARCHITECTURAL ADVANTAGES
PERFORMANCE CHARACTERISTICS
This document contains information on a product under development at Advanced Micro Devices. The information
is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed
product without notice.
Power supply voltage of 2.7 to 3.3 volt
High performance
— Access time as fast as 55 ns
Package
— 73-Ball FBGA
Operating Temperature
— –40°C to +85°C
Simultaneous Read/Write operations
— Data can be continuously read from one bank while
— Zero latency between read and write operations
Flexible Bank™ architecture
— Read may occur in any of the three banks not being written
— Four banks may be grouped by customer to achieve desired
Manufactured on 0.13 µm process technology
SecSi™ (Secured Silicon) Sector: Extra 256 Byte sector
— Factory locked and identifiable: 16 bytes available for
— Customer lockable: Sector is one-time programmable. Once
Zero Power Operation
— Sophisticated power management circuits reduce power
Boot sectors
— Top and bottom boot sectors in the same device
Compatible with JEDEC standards
— Pinout and software compatible with single-power-supply
High performance
— Access time as fast as 55 ns
— Program time: 4 µs/word typical utilizing Accelerate function
Ultra low power consumption (typical values)
— 2 mA active read current at 1 MHz
— 10 mA active read current at 5 MHz
— 200 nA in standby or automatic sleep mode
Minimum 1 million write cycles guaranteed per sector
ADVANCE INFORMATION
executing erase/program functions in another bank.
or erased.
bank divisions.
secure, random factory Electronic Serial Number; verifiable
as factory locked through autoselect function. ExpressFlash
option allows entire sector to be available for factory-
secured data
sector is locked, data cannot be changed.
consumed during inactive periods to nearly zero.
flash standard
SOFTWARE FEATURES
HARDWARE FEATURES
pSRAM Features
20 year data retention at 125°C
— Reliable operation for the life of the system
Data Management Software (DMS)
— AMD-supplied software manages data programming,
— Eases historical sector erase flash limitations
Supports Common Flash Memory Interface (CFI)
Program/Erase Suspend/Erase Resume
— Suspends program/erase operations to allow programming/
Data# Polling and Toggle Bits
— Provides a software method of detecting the status of
Unlock Bypass Program command
— Reduces overall programming time when issuing multiple
Any combination of sectors can be erased
Ready/Busy# output (RY/BY#)
— Hardware method for detecting program or erase cycle
Hardware reset pin (RESET#)
— Hardware method of resetting the internal state machine to
WP#/ACC input pin
— Write protect (WP#) function protects sectors 0, 1, 140, and
— Acceleration (ACC) function accelerates program timing
Sector protection
— Hardware method of locking a sector, either in-system or
— Temporary Sector Unprotect allows changing data in
Power dissipation
— Operating: 40 mA maximum
— Standby: 70 µA maximum
— Deep power-down standby: 5 µA
CE1s# and CE2s Chip Select
Power down features using CE1s# and CE2s
Data retention supply voltage: 2.7 to 3.3 volt
Byte data control: LB#s (DQ7–DQ0), UB#s (DQ15–DQ8)
8-word page mode access
enabling EEPROM emulation
erasing in same bank
program or erase cycles
program command sequences
completion
the read mode
141, regardless of sector protect status
using programming equipment, to prevent any program or
erase operation within that sector
protected sectors in-system
Publication Number: 30775 Revision: A Amendment/+1
Issue Date: December 5, 2003