K4T1G044QF SAMSUNG [Samsung semiconductor], K4T1G044QF Datasheet - Page 12

• Manufacturer Part Number: K4T1G044QF
• Description: 1Gb F-die DDR2 SDRAM
• Manufacturer: SAMSUNG [Samsung semiconductor]

K4T1G044QF
K4T1G084QF
K4T1G164QF
6. Absolute Maximum Ratings
NOTE :
1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the
2. Storage Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions, please refer to JESD51-2 standard.
3. V
4. Voltage on any input or I/O may not exceed voltage on V
7. AC & DC Operating Conditions
7.1 Recommended DC operating Conditions (SSTL_1.8)
NOTE : There is no specific device V
1. The value of V
2. Peak to peak AC noise on V
3. V
4. AC parameters are measured with V
device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions
for extended periods may affect reliability.
may be equal to or less than 300mV.
device and V
DD
TT
V
Symbol
Symbol
IN,
V
V
T
V
V
V
of transmitting device must track V
and V
V
V
V
DDQ
STG
DDL
DDQ
DDL
REF
V
DD
DD
TT
OUT
DDQ
REF
REF
must be within 300mV of each other at all times; and V
Voltage on V
Voltage on V
Voltage on V
Voltage on any pin relative to V
Storage Temperature
is expected to track variations in V
Supply Voltage
Supply Voltage for DLL
Supply Voltage for Output
Input Reference Voltage
Termination Voltage
may be selected by the user to provide optimum noise margin in the system. Typically the value of V
REF
DD
DDQ
DDL
may not exceed +/-2% V
DD
pin relative to V
DD
pin relative to V
pin relative to V
supply voltage requirement for SSTL-1.8 compliance. However under all conditions V
Parameter
REF
, V
DDQ
of receiving device.
Parameter
and V
DDQ
DDL
SS
SS
SS
SS
.
DDQ
tied together.
REF
.
(DC).
datasheet
REF
must be not greater than 0.6 x V
0.49*V
V
REF
Min.
1.7
1.7
1.7
-0.04
DDQ
- 12 -
0.50*V
Rating
V
Typ.
1.8
1.8
1.8
REF
DDQ
- 1.0 V ~ 2.3 V
- 0.5 V ~ 2.3 V
- 0.5 V ~ 2.3 V
- 0.5 V ~ 2.3 V
-55 to +100
DDQ
Rating
. When V
REF
0.51*V
V
REF
is expected to be about 0.5 x V
Max.
DD
1.9
1.9
1.9
+0.04
DDQ
and V
DDQ
must be less than or equal to V
DDQ
and V
DDR2 SDRAM
Units
DDL
mV
V
V
V
V
are less than 500mV, V
Units
°C
V
V
V
V
DDQ
of the transmitting
Rev. 1.11
NOTE
DD
1,2
NOTE
4
4
3
.
1, 2
1
1
1
1
REF