AM4990NE ANALOGPOWER [Analog Power], AM4990NE Datasheet

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AM4990NE

Manufacturer Part Number
AM4990NE
Description
Dual N-Channel 100-V (D-S) MOSFET
Manufacturer
ANALOGPOWER [Analog Power]
Datasheet
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Power Dissipation
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient
Notes
a.
b.
Dual N-Channel 100-V (D-S) MOSFET
© Preliminary
Analog Power
Key Features:
• Low r
• Low thermal impedance
• Fast switching speed
Typical Applications:
• PoE Power Sourcing Equipment
• PoE Powered Devices
• Telecom DC/DC converters
• White LED boost converters
Surface Mounted on 1” x 1” FR4 Board.
Pulse width limited by maximum junction temperature
DS(on)
trench technology
ABSOLUTE MAXIMUM RATINGS (T
a
b
a
a
Parameter
Parameter
THERMAL RESISTANCE RATINGS
a
A
= 25°C UNLESS OTHERWISE NOTED)
1
Steady State
t <= 10 sec
T
T
T
T
V
A
A
A
A
DS
=25°C
=70°C
=25°C
=70°C
100
(V)
PRODUCT SUMMARY
Symbol
Symbol Maximum
T
92 @ V
81 @ V
R
J
V
V
I
P
, T
I
DM
I
θJA
DS
GS
D
S
r
D
DS(on)
stg
Publication Order Number:
GS
GS
(mΩ)
-55 to 150
= 4.5V
= 10V
Limit
62.5
100
±20
110
4.2
3.3
2.1
1.3
DS_AM4990NE_1A
30
3
AM4990NE
Units
Units
°C/W
I
D
4.2
4.0
°C
W
(A)
V
A
A

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AM4990NE Summary of contents

Page 1

... V = 10V GS 100 4.5V GS Symbol Limit V 100 DS V ± =25°C 4 =70°C 3 =25°C 2 =70°C 1 -55 to 150 J stg Symbol Maximum 62.5 R θJA 110 Publication Order Number: DS_AM4990NE_1A I (A) D 4.2 4.0 Units °C Units °C/W ...

Page 2

... GEN GEN d(off iss MHz oss C rss 2 AM4990NE Min Typ Max 1 3.5 ± 55° 0 2.9 A 3 2 Ω 990 115 77 Publication Order Number: DS_AM4990NE_1A Unit mΩ ...

Page 3

... VGS - Gate-to-Source Voltage (V) 2. Transfer Characteristics 25°C 1 0.1 0 0.2 0.4 0.6 0.8 VSD - Source-to-Drain Voltage (V) 4. Drain-to-Source Forward Voltage Ciss Coss Crss VDS-Drain-to-Source Voltage (V) 6. Capacitance Publication Order Number: DS_AM4990NE_1A AM4990NE 1 1MHz 15 20 ...

Page 4

... Junction Temperature 0.001 0.01 0 TIME (SEC) 10. Single Pulse Maximum Power Dissipation R ( θJA = 110 ° θJA P(pk Duty Cycle 100 Publication Order Number: DS_AM4990NE_1A 125 150 100 1000 θJA (t) θ 1000 ...

Page 5

... The Package Top May Be Smaller Than The Package Bottom. 5. Dimension "B" Does Not Include Dambar Protrusion. Allowable Dambar Protrusion Shall Be 0.08 mm Total In Excess Of "B" Dimension At Maximum Material Condition. The Dambar Cannot Be Located On The Lower Radius Of The Foot. © Preliminary Package Information 5 AM4990NE Publication Order Number: DS_AM4990NE_1A ...

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