MAAPGM0018-DIE MACOM [Tyco Electronics], MAAPGM0018-DIE Datasheet - Page 6

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MAAPGM0018-DIE

Manufacturer Part Number
MAAPGM0018-DIE
Description
2W Ku-Band Power Amplifier 12.0-15.5 GHz
Manufacturer
MACOM [Tyco Electronics]
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MAAPGM0018-DIE
Manufacturer:
m/a-com
Quantity:
5 000
Specifications subject to change without notice.
Customer Service: Tel. (888)-563-3949
Email: macom_adbu_ics@tycoelectronics.com
2W Ku-Band Power Amplifier
North America: Tel. (800) 366-2266
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
Assembly Instructions:
Die attach: Use AuSn (80/20) 1-2 mil. preform solder. Limit time @ 300 °C to less than 5 minutes.
Wirebonding: Bond @ 160 °C using standard ball or thermal compression wedge bond techniques. For
DC pad connections, use either ball or wedge bonds. For best RF performance, use wedge bonds of
shortest length, although ball bonds are also acceptable.
Biasing Note: Must apply negative bias to V
damage to amplifier.
Note: Indicated V
pads between V
Note: Indicated V
V
GG
Support circuitry typical of MMIC characterization fixture for CW testing.
Figure 6. Recommended bonding diagram for pedestal mount.
35 Ω
GG
RF
D 1, 2
GG
pads represent the nominal bias configuration. Optionally, the V
IN
pads represent the nominal bias configuration. Optionally, the V
and V
100 pF
100 pF
V
V
GG
GG
0.1 µF
0.1 µF
D3
and V
can be used if more convenient.
D3
can be used if more convenient.
0.1 µF
0.1 µF
100 pF
100 pF
Visit www.macom.com for additional data sheets and product information.
V
V
D1, 2
D1, 2
GG
before applying positive bias to V
V
V
GG
GG
0.1 µF
0.1 µF
100 pF
100 pF
V
V
GG
D3
D3
pads between V
RF
MAAPGM0018-DIE
V
V
DD
DD
OUT
DD
D 1, 2
to prevent
GG
V 1.00

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