TH50VSF3582AASB TOSHIBA [Toshiba Semiconductor], TH50VSF3582AASB Datasheet - Page 17

• Manufacturer Part Number: TH50VSF3582AASB
• Description: TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS
• Manufacturer: TOSHIBA [Toshiba Semiconductor]

AC CHARACTERISTICS
READ CYCLE
t
t
t
t
t
t
t
t
t
t
BLOCK PROTECT
t
t
t
t
PROGRAM AND ERASE CHARACTERISTICS
t
t
t
t
*: typ.
SYMBOL
SYMBOL
SYMBOL
RC
ACC
CE
OE
CEE
OEE
OEH
OH
DF1
DF2
VPS
CESP
VPH
PPLH
PPW
PCEW
PBEW
EW
Read Cycle Time
Address Access Time
Output Data Hold Time
V
Auto-Program Time (Byte Mode)
Auto-Program Time (Word Mode)
Auto Chip Erase Time
Auto Block Erase Time
Erase/Program Cycle
CEF Access Time
OE Access Time
CEF to Output Low-Z
OE to Output Low-Z
OE Hold Time
CEF to Output Hi-Z
CEF Set-up Time
OE Hold Time
WE Low-Level Hold Time
ID
Set-up Time
OE
to Output Hi-Z
PARAMETER
(FLASH MEMORY)
PARAMETER
PARAMETER
MIN
70





0
0
0
0
30pF
LOAD CAPACITANCE
MAX
70
70
30
30
20





TH50VSF3582/3583AASB
MIN






0
0
0
0
0.7*
MIN
MIN
100
50*
10
11*
100pF
8*
4
4
4
5
2001-06-08 17/50
MAX
80
80
80
35




25
25
MAX
MAX
300
300
710
10





UNIT
Cycles
UNIT
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
µs
µs
µs
µs
s
s