MBM29DL164BE-70PFTN Fujitsu, MBM29DL164BE-70PFTN Datasheet
MBM29DL164BE-70PFTN
Manufacturer Part Number
MBM29DL164BE-70PFTN
Description
Manufacturer
Fujitsu
Datasheet
1.MBM29DL164BE-70PFTN.pdf
(76 pages)
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Part Number:
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FUJITSU SEMICONDUCTOR
Embedded Erase
FLASH MEMORY
CMOS
16M (2M 8/1M 16) BIT
MBM29DL16XTD/BD
Ordering Part No.
Max. Address Access Time (ns)
Max. CE Access Time (ns)
Max. OE Access Time (ns)
FEATURES
• 0.33 m Process Technology
• Simultaneous Read/Write operations (dual bank)
• Single 3.0 V read, program, and erase
PRODUCT LINE UP
PACKAGES
DATA SHEET
Multiple devices available with different bank sizes (Refer to Table 1)
Host system can program or erase in one bank, then immediately and simultaneously read from the other bank
Zero latency between read and write operations
Read-while-erase
Read-while-program
Minimizes system level power requirements
48-pin plastic TSOP (I)
(FPT-48P-M19)
TM
and Embedded Program
Part No.
Marking Side
V
V
CC
CC
= 3.3 V
= 3.0 V
TM
+0.3 V
–0.3 V
+0.6 V
–0.3 V
are trademarks of Advanced Micro Devices, Inc.
48-pin plastic TSOP (I)
Marking Side
(FPT-48P-M20)
-70/90/12
70
70
70
30
—
MBM29DL16XTD/MBM29DL16XBD
90
90
90
35
—
Dual Operation
48-pin plastic FBGA
(BGA-48P-M13)
DS05-20874-4E
120
120
12
50
—
(Continued)
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