GLS36VF3203-70-4I-EKE Greenliant, GLS36VF3203-70-4I-EKE Datasheet
![no-image](/images/manufacturer_photos/0/2/284/greenliant_sml.jpg)
GLS36VF3203-70-4I-EKE
Manufacturer Part Number
GLS36VF3203-70-4I-EKE
Description
Manufacturer
Greenliant
Datasheet
1.GLS36VF3203-70-4E-B3KE.pdf
(35 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
GLS36VF3203-70-4I-EKE
Manufacturer:
Greenliant
Quantity:
10
FEATURES:
• Organized as 2M x16 or 4M x8
• Dual Bank Architecture for Concurrent
• Single 2.7-3.6V for Read and Write Operations
• Superior Reliability
• Low Power Consumption:
• Hardware Sector Protection/WP# Input Pin
• Hardware Reset Pin (RST#)
• Byte# Pin
• Sector-Erase Capability
• Chip-Erase Capability
PRODUCT DESCRIPTION
The GLS36VF320x are 2M x16 or 4M x8 CMOS Concur-
rent Read/Write Flash Memory manufactured with high
performance SuperFlash technology. The split-gate cell
design and thick-oxide tunneling injector attain better reli-
ability and manufacturability compared with alternate
approaches. The devices write (Program or Erase) with a
2.7-3.6V power supply and conform to JEDEC standard
pinouts for x8/x16 memories.
Featuring high performance Word-Program, these devices
provide a typical Program time of 7 µsec and use the Tog-
gle Bit, Data# Polling, or RY/BY# to detect the completion
of the Program or Erase operation. To protect against inad-
vertent write, the devices have on-chip hardware and Soft-
©2010 Greenliant Systems, Ltd.
Read/Write Operation
– 32 Mbit Bottom Sector Protection
– 32 Mbit Top Sector Protection
– Endurance: 100,000 cycles (typical)
– Greater than 100 years Data Retention
– Active Current: 6 mA typical
– Standby Current: 4 µA typical
– Auto Low Power Mode: 4 µA typical
– Protects 8 KWord in the smaller bank by driving
– Resets the internal state machine to reading
– Selects 8-bit or 16-bit mode
– Uniform 2 KWord sectors
(in the smaller bank)
- GLS36VF3203: 8 Mbit + 24 Mbit
(in the smaller bank)
- GLS36VF3204: 24 Mbit + 8 Mbit
WP# low and unprotects by driving WP# high
array data
32 Mbit (x8/x16) Concurrent SuperFlash
GLS36VF3201C / 1602C32Mb (x8/x16) Concurrent SuperFlash
GLS36VF3203 / GLS36VF3204
www.greenliant.com
• Block-Erase Capability
• Erase-Suspend / Erase-Resume Capabilities
• Security ID Feature
• Fast Read Access Time
• Latched Address and Data
• Fast Erase and Program (typical):
• Automatic Write Timing
• End-of-Write Detection
• CMOS I/O Compatibility
• Conforms to Common Flash Memory Interface (CFI)
• JEDEC Standards
• Packages Available
ware Data Protection schemes. Designed, manufactured,
and tested for a wide spectrum of applications, these
devices are offered with a guaranteed endurance of 10,000
cycles. Data retention is rated at greater than 100 years.
These devices are suited for applications that require con-
venient and economical updating of program, configura-
tion, or data memory. For all system applications, the
devices significantly improve performance and reliability,
while lowering power consumption. Since for any given
voltage range, the SuperFlash technology uses less cur-
rent to program and has a shorter erase time, the total
energy consumed during any Erase or Program operation
– Uniform 32 KWord blocks
– Greenliant: 128 bits
– User: 256 Bytes
– 70 ns
– Sector-Erase Time: 18 ms
– Block-Erase Time: 18 ms
– Chip-Erase Time: 35 ms
– Program Time: 7 µs
– Internal V
– Toggle Bit
– Data# Polling
– Ready/Busy# pin
– Flash EEPROM Pinouts and command sets
– 48-ball TFBGA (6mm x 8mm)
– 48-lead TSOP (12mm x 20mm)
PP
Generation
S71270-05-000
Data Sheet
05/10