FM25L16BG Ramtron, FM25L16BG Datasheet
![no-image](/images/manufacturer_photos/0/5/556/ramtron_sml.jpg)
FM25L16BG
Manufacturer Part Number
FM25L16BG
Description
SOP-8
Manufacturer
Ramtron
Datasheet
1.FM25L16BG.pdf
(14 pages)
Specifications of FM25L16BG
Date_code
10+
Preliminary
FM25L16B
16Kb Serial 3V F-RAM Memory
Features
16K bit Ferroelectric Nonvolatile RAM
Very Fast Serial Peripheral Interface - SPI
Description
The FM25L16B is a 16-kilobit nonvolatile memory
employing an advanced ferroelectric process. A
ferroelectric random access memory or F-RAM is
nonvolatile and performs reads and writes like a
RAM. It provides reliable data retention for 38 years
while eliminating the complexities, overhead, and
system
EEPROM and other nonvolatile memories.
The FM25L16B performs write operations at bus
speed. No write delays are incurred. Data is written to
the memory array immediately after each byte has
been transferred to the device. The next bus cycle
may commence without the need for data polling.
The FM25L16B is capable of supporting 10
read/write cycles, or a million times more write
cycles than EEPROM.
These capabilities make the FM25L16B ideal for
nonvolatile memory applications requiring frequent
or rapid writes. Examples range from data collection,
where the number of write cycles may be critical, to
demanding industrial controls where the long write
time of EEPROM can cause data loss.
The FM25L16B provides substantial benefits to users
of
replacement. The FM25L16B uses the high-speed
SPI bus, which enhances the high-speed write
capability
specifications are guaranteed over an industrial
temperature range of -40°C to +85°C.
This product conforms to specifications per the terms of the Ramtron
standard warranty. The product has completed Ramtron’s internal
qualification testing and has reached production status.
Rev. 1.3
Mar. 2011
Organized as 2,048 x 8 bits
High Endurance 100 Trillion (10
38 Year Data Retention (
NoDelay™ Writes
Advanced High-Reliability Ferroelectric Process
Up to 20 MHz Frequency
Direct Hardware Replacement for EEPROM
SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)
serial
level
EEPROM
of
reliability
F-RAM
as
@
problems
a
technology.
+75ºC)
hardware
14
) Read/Writes
caused
drop-in
Device
by
14
Sophisticated Write Protection Scheme
Low Power Consumption
Industry Standard Configuration
Pin Configuration
Pin Name
/CS
/WP
/HOLD
SCK
SI
SO
VDD
VSS
Ordering Information
FM25L16B-G
FM25L16B-GTR
FM25L16B-DG
FM25L16B-DGTR
Hardware Protection
Software Protection
Low Voltage Operation 2.7-3.6V
200 A Active Current (1 MHz)
3 A (typ.) Standby Current
Industrial Temperature -40 C to +85 C
8-pin “Green”/RoHS SOIC and TDFN Packages
VSS
WP
SO
CS
1850 Ramtron Drive, Colorado Springs, CO 80921
VSS
/WP
/CS
SO
Function
Chip Select
Write Protect
Hold
Serial Clock
Serial Data Input
Serial Data Output
Supply Voltage
Ground
1
2
3
4
Top View
1
2
3
4
Ramtron International Corporation
“Green”/RoHS 8-pin SOIC
“Green”/RoHS 8-pin SOIC,
Tape & Reel
“Green”/RoHS 8-pin TDFN
“Green”/RoHS 8-pin TDFN,
Tape & Reel
(800) 545-F-RAM, (719) 481-7000
8
7
6
5
8
7
6
5
VDD
/HOLD
SCK
SI
VDD
HOLD
SCK
SI
www.ramtron.com
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