MX29F400TTC-55 Macronix International Co., MX29F400TTC-55 Datasheet
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MX29F400TTC-55
Manufacturer Part Number
MX29F400TTC-55
Description
Manufacturer
Macronix International Co.
Datasheets
1.MX29F400TTC-90.pdf
(44 pages)
2.MX29F400T.pdf
(44 pages)
3.MX29F400TTC-55.pdf
(44 pages)
Specifications of MX29F400TTC-55
Case
TSOP48
Date_code
2006+
FEATURES
• 524,288 x 8/262,144 x 16 switchable
• Single power supply operation
• Fast access time: 55/70/90/120ns
• Low power consumption
• Command register architecture
• Auto Erase (chip & sector) and Auto Program
• Erase suspend/Erase Resume
• Status Reply
GENERAL DESCRIPTION
The MX29F400T/B is a 4-mega bit Flash memory orga-
nized as 512K bytes of 8 bits or 256K words of 16 bits.
MXIC's Flash memories offer the most cost-effective
and reliable read/write non-volatile random access
memory. The MX29F400T/B is packaged in 44-pin SOP,
48-pin TSOP. It is designed to be reprogrammed and
erased in system or in standard EPROM programmers.
The standard MX29F400T/B offers access time as fast
as 55ns, allowing operation of high-speed microproces-
sors without wait states. To eliminate bus contention,
the MX29F400T/B has separate chip enable (CE) and
output enable (OE) controls.
MXIC's Flash memories augment EPROM functionality
with in-circuit electrical erasure and programming. The
MX29F400T/B uses a command register to manage this
functionality. The command register allows for 100%
P/N:PM0439
- 5.0V only operation for read, erase and program
operation
- 40mA maximum active current(5MHz)
- 1uA typical standby current
- Byte/word Programming (7us/12us typical)
- Sector Erase (Sector structure 16K-Bytex1, 8K-
Bytex2, 32K-Bytex1, and 64K-Byte x7)
- Automatically erase any combination of sectors with
Erase Suspend capability.
- Automatically program and verify data at specified
address
- Suspends an erase operation to read data from, or
program data to, another sector that is not being
erased, then resumes the erase.
- Data polling & Toggle bit for detection of program and
4M-BIT [512Kx8/256Kx16] CMOS FLASH MEMORY
1
• Ready/Busy pin (RY/BY)
• Sector protection
• 100,000 minimum erase/program cycles
• Latch-up protected to 100mA from -1V to VCC+1V
• Boot Code Sector Architecture
• Low VCC write inhibit is equal to or less than 3.2V
• Package type:
• Compatibility with JEDEC standard
• 20 years data retention
TTL level control inputs and fixed power supply levels
during erase and programming, while maintaining maxi-
mum EPROM compatibility.
MXIC Flash technology reliably stores memory contents
even after 100,000 erase and program cycles. The MXIC
cell is designed to optimize the erase and programming
mechanisms. In addition, the combination of advanced
tunnel oxide processing and low internal electric fields
for erase and program operations produces reliable cy-
cling. The MX29F400T/B uses a 5.0V±10% VCC sup-
ply to perform the High Reliability Erase and auto Pro-
gram/Erase algorithms.
The highest degree of latch-up protection is achieved
with MXIC's proprietary non-epi process. Latch-up pro-
tection is proved for stresses up to 100 milliamps on
address and data pin from -1V to VCC + 1V.
erase cycle completion.
- Provides a hardware method of detecting program or
erase cycle completion.
- Sector protect/unprotect for 5V only system or 5V/
12V system.
- Hardware method to disable any combination of
sectors from program or erase operations
- T = Top Boot Sector
- B = Bottom Boot Sector
- 44-pin SOP
- 48-pin TSOP
- Pinout and software compatible with single-power
supply Flash
MX29F400T/B
REV. 1.6 , NOV. 12, 2001