MX29F800TTC-90 Macronix International Co., MX29F800TTC-90 Datasheet

MX29F800TTC-90

Manufacturer Part Number

MX29F800TTC-90

Description

Manufacturer

Macronix International Co.

Datasheets

1.MX29F800TTC-90.pdf (42 pages)

2.MX29F800BMC-12.pdf (42 pages)

3.MX29F800TTC-70.pdf (42 pages)

Specifications of MX29F800TTC-90

Case

TSOP48

Date_code

2006+

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MX29F800TTC-90

Manufacturer:

MXIC

Quantity:

5 530

Company:

Meier Automation Equipment Co., Limited

Part Number:

MX29F800TTC-90

Manufacturer:

Quantity:

20 000

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Download datasheet (526Kb)

FEATURES

• 1,048,576 x 8/524,288 x 16 switchable

• Single power supply operation

• Fast access time: 70/90/120ns

• Low power consumption

• Command register architecture

• Auto Erase (chip & sector) and Auto Program

• Erase suspend/Erase Resume

• Status Reply

GENERAL DESCRIPTION

The MX29F800T/B is a 8-mega bit Flash memory or-

ganized as 1M bytes of 8 bits or 512K words of 16 bits.

MXIC's Flash memories offer the most cost-effective and

reliable read/write non-volatile random access memory.

The MX29F800T/B is packaged in 44-pin SOP, 48-pin

TSOP. It is designed to be reprogrammed and erased

in system or in standard EPROM programmers.

The standard MX29F800T/B offers access time as fast

as 70ns, allowing operation of high-speed microproces-

sors without wait states. To eliminate bus contention,

the MX29F800T/B has separate chip enable (CE) and

output enable (OE) controls.

MXIC's Flash memories augment EPROM functionality

with in-circuit electrical erasure and programming. The

MX29F800T/B uses a command register to manage this

functionality. The command register allows for 100%

P/N:PM0578

- 5.0V only operation for read, erase and program

operation

- 50mA maximum active current

- 0.2uA typical standby current

- Byte/word Programming (7us/12us typical)

- Sector Erase (Sector structure 16K-Bytex1,

8K-Bytex2, 32K-Bytex1, and 64K-Byte x15)

- Automatically erase any combination of sectors with

Erase Suspend capability.

- Automatically program and verify data at specified

address

- Suspends sector erase operation to read data from,

or program data to, another sector that is not being

erased, then resumes the erase.

- Data polling & Toggle bit for detection of program and

8M-BIT [1Mx8/512Kx16] CMOS FLASH MEMORY

• Ready/Busy pin (RY/BY)

• Sector protection

• 100,000 minimum erase/program cycles

• Latch-up protected to 100mA from -1V to VCC+1V

• Boot Code Sector Architecture

• Low VCC write inhibit is equal to or less than 3.2V

• Package type:

• Compatibility with JEDEC standard

TTL level control inputs and fixed power supply levels

during erase and programming, while maintaining maxi-

mum EPROM compatibility.

MXIC Flash technology reliably stores memory contents

even after 100,000 erase and program cycles. The MXIC

cell is designed to optimize the erase and programming

mechanisms. In addition, the combination of advanced

tunnel oxide processing and low internal electric fields

for erase and program operations produces reliable cy-

cling. The MX29F800T/B uses a 5.0V±10% VCC sup-

ply to perform the High Reliability Erase and auto Pro-

gram/Erase algorithms.

The highest degree of latch-up protection is achieved

with MXIC's proprietary non-epi process. Latch-up pro-

tection is proved for stresses up to 100 milliamps on

address and data pin from -1V to VCC + 1V.

erase operation completion.

- Provides a hardware method of detecting program

or erase operation completion.

- Sector protect/chip unprotect for 5V/12V system.

- Hardware method to disable any combination of

sectors from program or erase operations

- Tempory sector unprotect allows code changes in

previously locked sectors.

- T = Top Boot Sector

- B = Bottom Boot Sector

- 44-pin SOP

- 48-pin TSOP

- Pinout and software compatible with single-power

supply Flash

MX29F800T/B

PRELIMINARY

REV. 1.7, JUL. 24, 2001

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