MX29L3211TC-12 Macronix International Co., MX29L3211TC-12 Datasheet

MX29L3211TC-12

Manufacturer Part Number

MX29L3211TC-12

Description

Manufacturer

Macronix International Co.

Datasheet

1.MX29L3211TC-12.pdf (38 pages)

Specifications of MX29L3211TC-12

Case

TSOP48

Date_code

2006+

Current page: 1 of 38
Download datasheet (657Kb)

FEATURES

• 3.3V ± 10% write, erase and read

• Endurance: 10,000 cycles

• Fast random access time: 100ns/120ns

• Fast pagemode access time: 50ns

• Page access depth: 16 bytes/8 words

• Sector erase architecture

• Auto Erase and Auto Program Algorithms

• Status Register feature for detection of program or

GENERAL DESCRIPTION

The MX29L3211 is a 32-mega bit pagemode Flash

memory organized as either 4M word x 8 or 2M byte x 16.

The MX29L3211 includes 32 sectors of 64K words.

MXIC's Flash memories offer the most cost-effective

and reliable read/write non-volatile random access

memory and fast page mode access. The MX29L3211

is packaged 44-pin SOP and 48-pin TSOP. It is designed

to be reprogrammed and erased in-system or in-standard

EPROM programmers.

The standard MX29L3211 offers access times as fast as

100ns,allowing operation of high-speed microprocessors

without wait. To eliminate bus contention, the MX29L3211

has separate chip enable CE, output enable (OE), and

write enable (WE) controls.

MXIC's Flash memories augment EPROM functionality

with in-circuit electrical erasure and programming. The

MX29L3211 uses a command register to manage this

functionality.

P/N:PM0641

- 32 equal sectors of 64K word each

- Sector erase time: 200ms typical

- Automatically erases any one of the sectors or the

whole chip with Erase Suspend capability

- Automatically programs and verifies data at specified

addresses

SINGLE VOLTAGE PAGEMODE FLASH EEPROM

• Low VCC write inhibit is equal to or less than 1.8V

• Software data protection

• Page program operation

• Low power dissipation

• Two independently Protected sectors

• Industry standard surface mount packaging

To allow for simple in-system reprogrammability, the

MX29L3211 does not require high input voltages for

programming. Three-volt-only commands determine

the operation of the device. Reading data out of the

device is similar to reading from an EPROM.

MXIC Flash technology reliably stores memory contents

even after 10,000 cycles. The MXIC's cell is designed

to optimize the erase and programming mechanisms. In

addition, the combination of advanced tunnel oxide

processing and low internal electric fields for erase and

programming operations produces reliable cycling. The

MX29L3211 uses a 3.3V ± 10% VCC supply to perform

the Auto Erase and Auto Program algorithms.

The highest degree of latch-up protection is achieved

with MXIC's proprietary non-epi process. Latch-up

protection is proved for stresses up to 100 milliamps on

address and data pin from -1V to VCC +1V.

erase cycle completion

- Internal address and data latches for 256 bytes/128

words per page

- Page programming time: 5ms typical

- 50mA active current

- 20uA standby current

- 44 pin SOP (500mil)

- 48 TSOP(I)

ADVANCED INFORMATION

32M-BIT [4M x 8/2M x 16] CMOS

MX29L3211

REV. 0.3, NOV. 06, 2001

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