MX29LV800CTTC-70G Macronix International Co., MX29LV800CTTC-70G Datasheet

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MX29LV800CTTC-70G

Manufacturer Part Number
MX29LV800CTTC-70G
Description
Manufacturer
Macronix International Co.

Specifications of MX29LV800CTTC-70G

Case
TSOP48
Date_code
2006+

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FEATURES
• Extended single - supply voltage range 2.7V to 3.6V
• 1,048,576 x 8/524,288 x 16 switchable
• Single power supply operation
• Fast access time: 45R/55R/70/90ns
• Low power consumption
• Command register architecture
• Fully compatible with MX29LV800BT/BB device
• Auto Erase (chip & sector) and Auto Program
• Erase suspend/Erase Resume
• Status Reply
GENERAL DESCRIPTION
The MX29LV800C T/B is a 8-mega bit Flash memory
organized as 1M bytes of 8 bits or 512K words of 16
bits. MXIC's Flash memories offer the most cost-effec-
tive and reliable read/write non-volatile random access
memory. The MX29LV800C T/B is packaged in 44-pin
SOP, 48-pin TSOP, and 48-ball CSP. It is designed to be
reprogrammed and erased in system or in standard
EPROM programmers.
The standard MX29LV800C T/B offers access time as
fast as 45ns, allowing operation of high-speed micropro-
cessors without wait states. To eliminate bus conten-
tion, the MX29LV800C T/B has separate chip enable
(CE#) and output enable (OE#) controls.
MXIC's Flash memories augment EPROM functionality
with in-circuit electrical erasure and programming. The
MX29LV800C T/B uses a command register to manage
this functionality. The command register allows for 100%
P/N:PM1183
- 3.0V only operation for read, erase and program
operation
- 30mA maximum active current
- 0.2uA typical standby current
- Byte/word Programming (9us/11us typical)
- Sector Erase (Sector structure 16K-Bytex1,
8K-Bytex2, 32K-Bytex1, and 64K-Byte x15)
- Automatically erase any combination of sectors with
Erase Suspend capability
- Automatically program and verify data at specified
address
- Suspends sector erase operation to read data from,
or program data to, any sector that is not being erased,
then resumes the erase
- Data# polling & Toggle bit for detection of program
and erase operation completion
8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE
1
MX29LV800C T/B
• Ready/Busy# pin (RY/BY#)
• Sector protection
• CFI (Common Flash Interface) compliant
• 100,000 minimum erase/program cycles
• Latch-up protected to 100mA from -1V to VCC+1V
• Boot Sector Architecture
• Package type:
• Compatibility with JEDEC standard
• 10 years data retention
TTL level control inputs and fixed power supply levels
during erase and programming, while maintaining maxi-
mum EPROM compatibility.
MXIC Flash technology reliably stores memory contents
even after 100,000 erase and program cycles. The MXIC
cell is designed to optimize the erase and programming
mechanisms. In addition, the combination of advanced
tunnel oxide processing and low internal electric fields
for erase and program operations produces reliable cy-
cling. The MX29LV800C T/B uses a 2.7V~3.6V VCC
supply to perform the High Reliability Erase and auto
Program/Erase algorithms.
The highest degree of latch-up protection is achieved
with MXIC's proprietary non-epi process. Latch-up pro-
tection is proved for stresses up to 100 milliamperes on
address and data pin from -1V to VCC + 1V.
- Provides a hardware method of detecting program or
erase operation completion
- Hardware method to disable any combination of
sectors from program or erase operations
- Temporary sector unprotected allows code changes
in previously locked sectors.
- Flash device parameters stored on the device and
provide the host system to access
- T = Top Boot Sector
- B = Bottom Boot Sector
- 44-pin SOP
- 48-pin TSOP
- 48-ball CSP (6 x 8mm)
- 48-ball CSP (4 x 6mm)
- All Pb-free devices are RoHS Compliant
- Pinout and software compatible with single-power
supply Flash
3V ONLY FLASH MEMORY
REV. 1.4, APR. 24, 2006

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