SST39VF1602-90-4I-EK Silicon Storage Technology, Inc, SST39VF1602-90-4I-EK Datasheet
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SST39VF1602-90-4I-EK
Manufacturer Part Number
SST39VF1602-90-4I-EK
Description
Manufacturer
Silicon Storage Technology, Inc
Specifications of SST39VF1602-90-4I-EK
Case
TSOP48
Date_code
2006+
FEATURES:
• Organized as 1M x16: SST39VF1601/1602
• Single Voltage Read and Write Operations
• Superior Reliability
• Low Power Consumption (typical values at 5 MHz)
• Hardware Block-Protection/WP# Input Pin
• Sector-Erase Capability
• Block-Erase Capability
• Chip-Erase Capability
• Erase-Suspend/Erase-Resume Capabilities
• Hardware Reset Pin (RST#)
PRODUCT DESCRIPTION
The SST39VF160x/320x/640x devices are 1M x16, 2M
x16, and 4M x16 respectively, CMOS Multi-Purpose
Flash Plus (MPF+) manufactured with SST’s proprietary,
high performance CMOS SuperFlash technology. The
split-gate cell design and thick-oxide tunneling injector
attain better reliability and manufacturability compared
with alternate approaches. The SST39VF160x/320x/640x
write (Program or Erase) with a 2.7-3.6V power supply.
These devices conform to JEDEC standard pinouts for
x16 memories.
Featuring
SST39VF160x/320x/640x devices provide a typical Word-
Program time of 7 µsec. These devices use Toggle Bit or
Data# Polling to indicate the completion of Program opera-
tion. To protect against inadvertent write, they have on-chip
hardware and Software Data Protection schemes.
Designed, manufactured, and tested for a wide spectrum of
applications, these devices are offered with a guaranteed
typical endurance of 100,000 cycles. Data retention is rated
at greater than 100 years.
©2003 Silicon Storage Technology, Inc.
S71223-03-000
1
16 Mbit / 32 Mbit / 64 Mbit (x16) Multi-Purpose Flash Plus
– 2.7-3.6V
– Endurance: 100,000 Cycles (Typical)
– Greater than 100 years Data Retention
– Active Current: 9 mA (typical)
– Standby Current: 3 µA (typical)
– Auto Low Power Mode: 3 µA (typical)
– Top Block-Protection (top 32 KWord)
– Bottom Block-Protection (bottom 32 KWord)
– Uniform 2 KWord sectors
– Uniform 32 KWord blocks
for SST39VF1602/3202/6402
for SST39VF1601/3201/6401
high
SST39VF160x / 320x / 640x2.7V 16Mb / 32Mb / 64Mb (x16) MPF+ memories
2M x16: SST39VF3201/3202
4M x16: SST39VF6401/6402
performance
SST39VF1601 / SST39VF3201 / SST39VF6401
SST39VF1602 / SST39VF3202 / SST39VF6402
11/03
Word-Program,
the
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
• Security-ID Feature
• Fast Read Access Time:
• Latched Address and Data
• Fast Erase and Word-Program:
• Automatic Write Timing
• End-of-Write Detection
• CMOS I/O Compatibility
• JEDEC Standard
• Packages Available
The SST39VF160x/320x/640x devices are suited for appli-
cations that require convenient and economical updating of
program, configuration, or data memory. For all system
applications, they significantly improve performance and
reliability, while lowering power consumption. They inher-
ently use less energy during Erase and Program than alter-
native flash technologies. The total energy consumed is a
function of the applied voltage, current, and time of applica-
tion. Since for any given voltage range, the SuperFlash
technology uses less current to program and has a shorter
erase time, the total energy consumed during any Erase or
Program operation is less than alternative flash technolo-
gies. These devices also improve flexibility while lowering
the cost for program, data, and configuration storage appli-
cations.
The SuperFlash technology provides fixed Erase and Pro-
gram times, independent of the number of Erase/Program
cycles that have occurred. Therefore the system software
or hardware does not have to be modified or de-rated as is
necessary with alternative flash technologies, whose
Erase and Program times increase with accumulated
Erase/Program cycles.
– SST: 128 bits; User: 128 bits
– 70 ns
– 90 ns
– Sector-Erase Time: 18 ms (typical)
– Block-Erase Time: 18 ms (typical)
– Chip-Erase Time: 40 ms (typical)
– Word-Program Time: 7 µs (typical)
– Internal V
– Toggle Bits
– Data# Polling
– Flash EEPROM Pinouts and command sets
– 48-lead TSOP (12mm x 20mm)
– 48-ball TFBGA (6mm x 8mm) for 16M and 32M
– 48-ball TFBGA (8mm x 10mm) for 64M
PP
Generation
These specifications are subject to change without notice.
MPF is a trademark of Silicon Storage Technology, Inc.
Preliminary Specifications